The dependence of GaN growth rate on electron temperature in an ECR plasma
文献类型：期刊论文
| 作者 | Pu, YK ; Ren, YF ; Yang, SZ ; Dywer, D ; Zhang, XG ; Jia, XJ |
| 刊名 | SURFACE & COATINGS TECHNOLOGY
 |
| 出版日期 | 2000 |
| 卷号 | 131期号:1-3页码:470 |
| 关键词 | MOLECULAR-BEAM EPITAXY CYCLOTRON-RESONANCE PLASMA VAPOR-PHASE EPITAXY FILMS DEPOSITION |
| ISSN号 | 0257-8972 |
| 通讯作者 | Pu, YK (reprint author), Tsing Hua Univ, Dept Elect Engn, Beijing 100084, Peoples R China. |
| 中文摘要 | Experiments on the deposition of GaN thin films were carried out in an ECR plasma reactor using nitrogen gas and trimethylgallium (TMG) as precursors. Electron temperature and nitrogen species adjacent to the substrate surface during deposition were measured by a CCD spectrometer. We observed an optimum electron temperature for the growth rate. The result suggests that tuning of electron energy (or temperature) can be used to optimize the deposition and electron temperature near the substrate surface may be a candidate for one of the control parameters in plasma-assisted CVD. (C) 2000 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/44985]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Pu, YK,Ren, YF,Yang, SZ,et al. The dependence of GaN growth rate on electron temperature in an ECR plasma[J]. SURFACE & COATINGS TECHNOLOGY,2000,131(1-3):470. |
| APA | Pu, YK,Ren, YF,Yang, SZ,Dywer, D,Zhang, XG,&Jia, XJ.(2000).The dependence of GaN growth rate on electron temperature in an ECR plasma.SURFACE & COATINGS TECHNOLOGY,131(1-3),470. |
| MLA | Pu, YK,et al."The dependence of GaN growth rate on electron temperature in an ECR plasma".SURFACE & COATINGS TECHNOLOGY 131.1-3(2000):470. |
入库方式： OAI收割
来源：物理研究所
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