The effect of atomic of hydrogen in the initial procedure of diamond heteroepitaxy on Si and the interface between diamond and Si
文献类型：期刊论文
| 作者 | Kang, J ; Xiao, CY ; Xiong, YY ; Feng, KA ; Lin, ZD |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 1999 |
| 卷号 | 48期号:11页码:2104 |
| 关键词 | SILICON SI(100) STATES GROWTH |
| ISSN号 | 1000-3290 |
| 通讯作者 | Kang, J (reprint author), Beijing Univ, Dept Phys, Beijing 100871, Peoples R China. |
| 中文摘要 | Nanocrystallization of Zr41Ti14Cu12.5Ni9Be22.5C1 bulk metallic glass (BMG) under high pressure is investigated. It is found that the nanocrystallization is pressure assisted, and the primary nanocrystallization temperature decreases as the applied pressure increases. Pressure annealing of the BMG in the supercooled liquid region produces a composite with dispersion of very fine nanocrystallites in the amorphous matrix. A fully nanocrystallization is obtained by pressure annealing under 6 GPa at 723 K. The pressure also controls the phase selection during the crystallization. The mechanism for the pressure-assisted nanocrystallization is discussed. (C) 1999 American Institute of Physics. [S0003- 6951(99)04444-7]. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45011]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Kang, J,Xiao, CY,Xiong, YY,et al. The effect of atomic of hydrogen in the initial procedure of diamond heteroepitaxy on Si and the interface between diamond and Si[J]. ACTA PHYSICA SINICA,1999,48(11):2104. |
| APA | Kang, J,Xiao, CY,Xiong, YY,Feng, KA,&Lin, ZD.(1999).The effect of atomic of hydrogen in the initial procedure of diamond heteroepitaxy on Si and the interface between diamond and Si.ACTA PHYSICA SINICA,48(11),2104. |
| MLA | Kang, J,et al."The effect of atomic of hydrogen in the initial procedure of diamond heteroepitaxy on Si and the interface between diamond and Si".ACTA PHYSICA SINICA 48.11(1999):2104. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。