The effect of biexciton, wetting layer leakage and Auger capture on Rabi oscillation damping in quantum dots
文献类型：期刊论文
| 作者 | Liu, SD ; Cheng, MT ; Zhou, HJ ; Li, YY ; Wang, QQ ; Xue, QK |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2006 |
| 卷号 | 55期号:5页码:2122 |
| ISSN号 | 1000-3290 |
| 关键词 | CARRIER RELAXATION ELECTRON DYNAMICS SYSTEM LASER GAIN |
| 通讯作者 | Liu, SD (reprint author), Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. |
| 中文摘要 | The decoherence of Rabi oscillation with multi-level processes in semiconductor quantum dots excited by laser pulses is investigated. By using population dynamic equations of multi-level system, the effect of three kinds of multi-level processes on the damping of Rabi oscillation in quantum dots are numerically simulated and discussed. The effect of biexciton can be neglected when the pulse width is larger than 5ps; the population leakage to wetting layer results in the decreasing of the,amplitude and average of the population oscillation on the exciton ground state with the increasing of the excitation intensity; the effect of the two kinds of Auger capture processes on the Rabi oscillation and the spectral width of the photoluminescence from the exciton recombination are also discussed. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45012]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, SD,Cheng, MT,Zhou, HJ,et al. The effect of biexciton, wetting layer leakage and Auger capture on Rabi oscillation damping in quantum dots[J]. ACTA PHYSICA SINICA,2006,55(5):2122. |
| APA | Liu, SD,Cheng, MT,Zhou, HJ,Li, YY,Wang, QQ,&Xue, QK.(2006).The effect of biexciton, wetting layer leakage and Auger capture on Rabi oscillation damping in quantum dots.ACTA PHYSICA SINICA,55(5),2122. |
| MLA | Liu, SD,et al."The effect of biexciton, wetting layer leakage and Auger capture on Rabi oscillation damping in quantum dots".ACTA PHYSICA SINICA 55.5(2006):2122. |
入库方式： OAI收割
来源：物理研究所
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