The electrical transport behavior of Zn-treated Zn1-xMnxO bulks
文献类型：期刊论文
| 作者 | Peng, XD ; Zhu, T ; Wang, FW ; Huang, WG ; Cheng, ZH |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2009 |
| 卷号 | 18期号:6页码:2576 |
| 关键词 | MN-DOPED ZNO DILUTED MAGNETIC SEMICONDUCTORS ROOM-TEMPERATURE FERROMAGNETISM THIN-FILMS MAGNETORESISTANCE EXCHANGE ABSENCE |
| ISSN号 | 1674-1056 |
| 通讯作者 | Zhu, T (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Zn1-xMnxO bulks have been prepared by the solid state reaction method. Zn vapor treatment has been carried out to adjust the carrier concentration. For the Zn treated Zn1-xMnxO bulks, analysis of the temperature dependence of resistance and the field dependence of magnetoresistance demonstrates that the bound magnetic polarons (BMPs) play an important role in the electrical transport behavior. The hopping of BMPs dominates the electrical conduction behavior when temperature is below 170 K. At low temperature, paramagnetic Zn1-xMnxO bulks show a large magnetoresistance effect, which indicates that the large magnetoresistance effect in transit ion-metal doped ZnO dilute magnetic semiconductors is independent of their magnetic states. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [50871120] |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45114]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Peng, XD,Zhu, T,Wang, FW,et al. The electrical transport behavior of Zn-treated Zn1-xMnxO bulks[J]. CHINESE PHYSICS B,2009,18(6):2576. |
| APA | Peng, XD,Zhu, T,Wang, FW,Huang, WG,&Cheng, ZH.(2009).The electrical transport behavior of Zn-treated Zn1-xMnxO bulks.CHINESE PHYSICS B,18(6),2576. |
| MLA | Peng, XD,et al."The electrical transport behavior of Zn-treated Zn1-xMnxO bulks".CHINESE PHYSICS B 18.6(2009):2576. |
入库方式： OAI收割
来源：物理研究所
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