The fabrication of nanocrystalline BaTiO3 ceramics under high temperature and high pressure
文献类型：期刊论文
| 作者 | Xiao, CJ ; Jin, CQ ; Wang, XH |
| 刊名 | JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
 |
| 出版日期 | 2009 |
| 卷号 | 209期号:4页码:2033 |
| 关键词 | BARIUM-TITANATE DOPED BATIO3 ALUMINA |
| ISSN号 | 0924-0136 |
| 通讯作者 | Xiao, CJ (reprint author), Henan Univ Technol, Dept Mat Sci & Engn, Zhen Zhou 450007, Peoples R China. |
| 中文摘要 | The high temperature and high pressure sintering method was adopted to fabricate dense nanocrystalline BaTiO3 ceramics. In the direct procedure sintering, there existed many "beams" in nanocrystalline BaTiO3 ceramics. The microstructure and chemical composition of the "beam" has been investigated by scanning electron microscope, transmission electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction. The results indicated that the "beams" in nanocrystalline ceramics were caused by nano powders agglomerating. Using the three-step method sintering, i.e., two times cold pressing, and following by the high pressure and high temperature sintering, all the "beams" disappeared. Moreover, the dense BaTiO3 ceramics with uniform grain sizes were obtained. (C) 2008 Published by Elsevier B.V. |
| 收录类别 | SCI |
| 资助信息 | Ministry of Sciences and Technology of China [2002CB613301] |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45149]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xiao, CJ,Jin, CQ,Wang, XH. The fabrication of nanocrystalline BaTiO3 ceramics under high temperature and high pressure[J]. JOURNAL OF MATERIALS PROCESSING TECHNOLOGY,2009,209(4):2033. |
| APA | Xiao, CJ,Jin, CQ,&Wang, XH.(2009).The fabrication of nanocrystalline BaTiO3 ceramics under high temperature and high pressure.JOURNAL OF MATERIALS PROCESSING TECHNOLOGY,209(4),2033. |
| MLA | Xiao, CJ,et al."The fabrication of nanocrystalline BaTiO3 ceramics under high temperature and high pressure".JOURNAL OF MATERIALS PROCESSING TECHNOLOGY 209.4(2009):2033. |
入库方式： OAI收割
来源：物理研究所
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