THE FORMATION OF ATOMIC STEPS IN CHEMICAL-VAPOR-DEPOSITION DIAMOND GROWTH
文献类型：期刊论文
| 作者 | ZHAO, LB ; FENG, KA ; LIN, ZD |
| 刊名 | DIAMOND AND RELATED MATERIALS
 |
| 出版日期 | 1994 |
| 卷号 | 3期号:1-2页码:155 |
| 关键词 | EPITAXIAL-GROWTH RATE CONSTANTS LOW-PRESSURE FILM GROWTH MECHANISM SURFACE PLASMA ACETYLENE OXYGEN PHASE |
| ISSN号 | 0925-9635 |
| 中文摘要 | A mechanism for the formation of atomic steps in chemical vapour deposition diamond growth is proposed. First, a number of groups is adsorbed on the diamond (111) surface, each of which consists of three neighbouring methyl radicals, and there are small steric repulsions among these groups because of the large distances between them; second, the three CH3 radicals in each of the groups are bound to form the step diamond structure via H abstraction of hydrogen atoms and CH3 radical intermediates. The epitaxial growth possibly proceeds on addition of a certain species, such as C2H2 or CH3 addition, until it encounters another step structure from epitaxial growth of another group of CH3 radicals. Once the atomic steps are flattened, the process will be repeated again. This mechanism is supported by the results of first-principles discrete variational method calculations and is consistent with the conclusions reported in the literature. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45165]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | ZHAO, LB,FENG, KA,LIN, ZD. THE FORMATION OF ATOMIC STEPS IN CHEMICAL-VAPOR-DEPOSITION DIAMOND GROWTH[J]. DIAMOND AND RELATED MATERIALS,1994,3(1-2):155. |
| APA | ZHAO, LB,FENG, KA,&LIN, ZD.(1994).THE FORMATION OF ATOMIC STEPS IN CHEMICAL-VAPOR-DEPOSITION DIAMOND GROWTH.DIAMOND AND RELATED MATERIALS,3(1-2),155. |
| MLA | ZHAO, LB,et al."THE FORMATION OF ATOMIC STEPS IN CHEMICAL-VAPOR-DEPOSITION DIAMOND GROWTH".DIAMOND AND RELATED MATERIALS 3.1-2(1994):155. |
入库方式： OAI收割
来源：物理研究所
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