The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy
文献类型：期刊论文
| 作者 | Wang, LS ; Liu, XL ; Zan, YD ; Wang, D ; Lu, DC ; Wang, ZG ; Wang, YT ; Cheng, LS ; Zhang, Z |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1998 |
| 卷号 | 193期号:4页码:484 |
| 关键词 | MOLECULAR-BEAM EPITAXY SINGLE CRYSTALLINE GAN HIGH-QUALITY GAN INTERMEDIATE LAYER BUFFER LAYERS SI FILMS ALN DEPOSITION SAPPHIRE |
| ISSN号 | 0022-0248 |
| 通讯作者 | Wang, LS (reprint author), Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. |
| 中文摘要 | Single crystal GaN films have been grown on to an Al2O3 coated (001)Si substrate in a horizontal-type low-pressure MOVPE system. A thin Al2O3 layer is an intermediate layer for the growth of single crystal GaN on to Si although it is only an oriented polycrystal him as shown by reflection high electron diffraction. Moreover, the oxide was not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN overlayer as studied by transmission electron microscopy. Double crystal X-ray diffraction showed that the linewidth of (0002) peak of the X-ray rocking curve of the 1.3 mu m sample was 54 arcmin and the films had heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature was observed by photoluminescence spectroscopy. (C) 1998 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45183]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, LS,Liu, XL,Zan, YD,et al. The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,1998,193(4):484. |
| APA | Wang, LS.,Liu, XL.,Zan, YD.,Wang, D.,Lu, DC.,...&Zhang, Z.(1998).The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy.JOURNAL OF CRYSTAL GROWTH,193(4),484. |
| MLA | Wang, LS,et al."The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy".JOURNAL OF CRYSTAL GROWTH 193.4(1998):484. |
入库方式： OAI收割
来源：物理研究所
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