The growth and luminescence of SiGe dots
文献类型：期刊论文
| 作者 | Chen, H ; Xie, XG ; Cheng, WQ ; Huang, Q ; Zhou, JM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1997 |
| 卷号 | 175页码:524 |
| 关键词 | STRAINED-LAYER SUPERLATTICES MOLECULAR-BEAM EPITAXY PHOTOLUMINESCENCE |
| ISSN号 | 0022-0248 |
| 中文摘要 | It is found that the SiGe alloy self-organizes into uniform quantum dots embedded in the Si layer during the growth of a strained SiGe/Si superlattices on a Si(0 0 1) substrate by molecular beam epitaxy. The energy of photoluminescence from the quantum dots is higher than that of the indirect band gap of Si, and the luminescence intensity of the quantum dots exceeds that of a quantum well by three orders of magnitude. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45184]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, H,Xie, XG,Cheng, WQ,et al. The growth and luminescence of SiGe dots[J]. JOURNAL OF CRYSTAL GROWTH,1997,175:524. |
| APA | Chen, H,Xie, XG,Cheng, WQ,Huang, Q,&Zhou, JM.(1997).The growth and luminescence of SiGe dots.JOURNAL OF CRYSTAL GROWTH,175,524. |
| MLA | Chen, H,et al."The growth and luminescence of SiGe dots".JOURNAL OF CRYSTAL GROWTH 175(1997):524. |
入库方式： OAI收割
来源：物理研究所
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