The impact of nanoporous SiN (x) interlayer growth position on high-quality GaN epitaxial films
文献类型：期刊论文
| 作者 | Ma, ZG ; Xing, ZG ; Wang, XL ; Chen, Y ; Xu, PQ ; Cui, YX ; Wang, L ; Jiang, Y ; Jia, HQ ; Chen, H |
| 刊名 | CHINESE SCIENCE BULLETIN
 |
| 出版日期 | 2011 |
| 卷号 | 56期号:25页码:2739 |
| 关键词 | LIGHT-EMITTING-DIODES LATERAL OVERGROWTH BUFFER LAYERS REDUCTION DISLOCATIONS DIFFRACTION SAPPHIRE |
| ISSN号 | 1001-6538 |
| 通讯作者 | Ma, ZG (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter, Beijing 100190, Peoples R China. |
| 中文摘要 | The impact of nanoporous SiNx interlayer growth position on high-quality GaN epitaxial film was elucidated from the behavior of dislocations. The best quality GaN film was achieved when a nanoporous SiNx interlayer was grown on a rough layer, with the high-resolution X-ray diffraction rocking curve full width at half maximum for (1 (1) over bar 02) reflection decreasing to 223 arcs, and the total dislocation density reduced to less than 1.0x10(8) cm(-2). GaN films were grown on sapphire substrates by metal organic chemical vapor deposition. The quality of these films was investigated with high-resolution X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. A preference for the formation of half-loops to reduce threading dislocations was observed when an SiNx interlayer was grown on a rough layer. A growth mechanism is proposed to explain this preference. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [50872146, 60890192/F0404]; Nationa Basic Research Program of China [2010CB327501] |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45212]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ma, ZG,Xing, ZG,Wang, XL,et al. The impact of nanoporous SiN (x) interlayer growth position on high-quality GaN epitaxial films[J]. CHINESE SCIENCE BULLETIN,2011,56(25):2739. |
| APA | Ma, ZG.,Xing, ZG.,Wang, XL.,Chen, Y.,Xu, PQ.,...&Chen, H.(2011).The impact of nanoporous SiN (x) interlayer growth position on high-quality GaN epitaxial films.CHINESE SCIENCE BULLETIN,56(25),2739. |
| MLA | Ma, ZG,et al."The impact of nanoporous SiN (x) interlayer growth position on high-quality GaN epitaxial films".CHINESE SCIENCE BULLETIN 56.25(2011):2739. |
入库方式： OAI收割
来源：物理研究所
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