The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Wu, SD ; Guo, LW ; Wang, WX ; Li, ZH ; Shang, XZ ; Hu, HY ; Huang, Q ; Zhou, JM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2004 |
| 卷号 | 270期号:3-4页码:359 |
| 关键词 | GROUP-V ELEMENTS III-V THERMODYNAMIC ANALYSIS GAAS SEMICONDUCTORS KINETICS INGAASP AS-2 |
| ISSN号 | 0022-0248 |
| 通讯作者 | Wu, SD (reprint author), Chinese Acad Sci, Inst Phys, Grp SF02, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | GaAsSb ternary epitaxial layers were grown on GaAs (001) substrate in various Sb-4/As-2 flux ratios by solid source molecular beam epitaxy. The alloy compositions of GaAs1-ySby were inferred using high-resolution X-ray symmetric (004) and asymmetric (224) glance exit diffraction. The non-equilibrium thermodynamic model is used to explain the different incorporation behavior between the Sb-4 and As-2 under the assumption that one incident Sb-4 molecule produces one active Sb-2 molecule. It is inferred that the activation energy of Sb-4 dissociation is about 0.46 eV. The calculated results for the incorporation efficiency of group V are in good agreement with the experimental data. (C) 2004 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45218]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wu, SD,Guo, LW,Wang, WX,et al. The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2004,270(3-4):359. |
| APA | Wu, SD.,Guo, LW.,Wang, WX.,Li, ZH.,Shang, XZ.,...&Zhou, JM.(2004).The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,270(3-4),359. |
| MLA | Wu, SD,et al."The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 270.3-4(2004):359. |
入库方式： OAI收割
来源：物理研究所
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