The influence of film thickness on photovoltaic effect for the Fe3O4/SrTiO3:Nb heterojunctions
文献类型：期刊论文
| 作者 | Wei, AD ; Sun, JR ; Chen, YZ ; Lu, WM ; Shen, BG |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2010 |
| 卷号 | 43期号:20 |
| 关键词 | FE3O4 FILMS THIN-FILMS BEHAVIOR |
| ISSN号 | 0022-3727 |
| 通讯作者 | Sun, JR (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Fe3O4 films with the thickness ranging from 5 to 160 nm have been grown on SrTiO3 : Nb (0.05wt%) substrates by the pulsed laser deposition technique. The good quality of the Fe3O4 film was confirmed by x-ray diffraction and magnetic analyses. It is found that the interfacial barrier of the resultant junctions, determined by the photovoltaic technique, decreases as film thickness increases from similar to 5 to similar to 40 nm, with a relative change of similar to 20%, and saturates at a value of similar to 1.2 eV above the thickness of 40 nm. Variation of lattice strains in the Fe3O4 film may be the reason for the thickness dependence of the interfacial barrier. |
| 收录类别 | SCI |
| 资助信息 | National Basic Research of China; National Natural Science Foundation of China; Chinese Academy of Science; Beijing Municipal Nature Science Foundation |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45232]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wei, AD,Sun, JR,Chen, YZ,et al. The influence of film thickness on photovoltaic effect for the Fe3O4/SrTiO3:Nb heterojunctions[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2010,43(20). |
| APA | Wei, AD,Sun, JR,Chen, YZ,Lu, WM,&Shen, BG.(2010).The influence of film thickness on photovoltaic effect for the Fe3O4/SrTiO3:Nb heterojunctions.JOURNAL OF PHYSICS D-APPLIED PHYSICS,43(20). |
| MLA | Wei, AD,et al."The influence of film thickness on photovoltaic effect for the Fe3O4/SrTiO3:Nb heterojunctions".JOURNAL OF PHYSICS D-APPLIED PHYSICS 43.20(2010). |
入库方式： OAI收割
来源：物理研究所
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