The influence of hydrogen on the growth of gallium catalyzed silicon oxide nanowires
文献类型:期刊论文
作者 | Yan, XQ ; Zhou, WY ; Sun, LF ; Gao, Y ; Liu, DF ; Wang, JX ; Zhou, ZP ; Yuan, HJ ; Song, L ; Liu, LF ; Wang, G ; Xie, SS |
刊名 | JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
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出版日期 | 2005 |
卷号 | 66期号:5页码:701 |
关键词 | PHOTOLUMINESCENCE PROPERTIES MOLTEN GALLIUM |
ISSN号 | 0022-3697 |
通讯作者 | Xie, SS (reprint author), Chinese Acad Sci, Inst Phys, POB 603-65, Beijing 100080, Peoples R China. |
中文摘要 | In this paper, we report that amorphous silicon oxide nanowires can be grown in a large quantity by chemical vapor deposition with molten gallium as the catalyst in a flow of mixture of SiH4, H-2 and N-2 at 600 degrees C. Meanwhile, when we grow these nanowires under the same conditions but without H-2, octopus-like silicon oxide nanostructures are obtained. The reasons and mechanisms for the growth of these nanowires and nanostructures are discussed. Blue light emission is observed from SiOx nanowires, which can be attributed to defect centers of high oxygen deficiency. These SiOx nanowires may find applications in nanodevices and reinforcing composites. (c) 2004 Elsevier Ltd. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-23 |
源URL | [http://ir.iphy.ac.cn/handle/311004/45237] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Yan, XQ,Zhou, WY,Sun, LF,et al. The influence of hydrogen on the growth of gallium catalyzed silicon oxide nanowires[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,2005,66(5):701. |
APA | Yan, XQ.,Zhou, WY.,Sun, LF.,Gao, Y.,Liu, DF.,...&Xie, SS.(2005).The influence of hydrogen on the growth of gallium catalyzed silicon oxide nanowires.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,66(5),701. |
MLA | Yan, XQ,et al."The influence of hydrogen on the growth of gallium catalyzed silicon oxide nanowires".JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 66.5(2005):701. |
入库方式: OAI收割
来源:物理研究所
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