中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The influence of hydrogen on the growth of gallium catalyzed silicon oxide nanowires

文献类型:期刊论文

作者Yan, XQ ; Zhou, WY ; Sun, LF ; Gao, Y ; Liu, DF ; Wang, JX ; Zhou, ZP ; Yuan, HJ ; Song, L ; Liu, LF ; Wang, G ; Xie, SS
刊名JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
出版日期2005
卷号66期号:5页码:701
关键词PHOTOLUMINESCENCE PROPERTIES MOLTEN GALLIUM
ISSN号0022-3697
通讯作者Xie, SS (reprint author), Chinese Acad Sci, Inst Phys, POB 603-65, Beijing 100080, Peoples R China.
中文摘要In this paper, we report that amorphous silicon oxide nanowires can be grown in a large quantity by chemical vapor deposition with molten gallium as the catalyst in a flow of mixture of SiH4, H-2 and N-2 at 600 degrees C. Meanwhile, when we grow these nanowires under the same conditions but without H-2, octopus-like silicon oxide nanostructures are obtained. The reasons and mechanisms for the growth of these nanowires and nanostructures are discussed. Blue light emission is observed from SiOx nanowires, which can be attributed to defect centers of high oxygen deficiency. These SiOx nanowires may find applications in nanodevices and reinforcing composites. (c) 2004 Elsevier Ltd. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-23
源URL[http://ir.iphy.ac.cn/handle/311004/45237]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
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GB/T 7714
Yan, XQ,Zhou, WY,Sun, LF,et al. The influence of hydrogen on the growth of gallium catalyzed silicon oxide nanowires[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,2005,66(5):701.
APA Yan, XQ.,Zhou, WY.,Sun, LF.,Gao, Y.,Liu, DF.,...&Xie, SS.(2005).The influence of hydrogen on the growth of gallium catalyzed silicon oxide nanowires.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,66(5),701.
MLA Yan, XQ,et al."The influence of hydrogen on the growth of gallium catalyzed silicon oxide nanowires".JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 66.5(2005):701.

入库方式: OAI收割

来源:物理研究所

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