The influence of interband tunneling on leakage current in manganite/titanate heterojunction
文献类型：期刊论文
| 作者 | Han, P ; Jia, JF |
| 刊名 | PHYSICS LETTERS A
 |
| 出版日期 | 2008 |
| 卷号 | 372期号:29页码:4943 |
| 关键词 | POSITIVE MAGNETORESISTANCE ROOM-TEMPERATURE 2 OXIDES SRTIO3 FILMS MECHANISM JUNCTION DIODE |
| ISSN号 | 0375-9601 |
| 通讯作者 | Han, P (reprint author), Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China. |
| 中文摘要 | The behavior of leakage current at reverse bias in p-La0.9Sr0.1MnO3/n-SrNb0.01Ti0.99O3 heterojunction has been theoretically studied by calculating interband tunneling current with various doping densities and temperatures. Our results reveal that the reduction of leakage current with decrease of doping density and increase of temperature originates from properties of interband tunneling. (C) 2008 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45239]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Han, P,Jia, JF. The influence of interband tunneling on leakage current in manganite/titanate heterojunction[J]. PHYSICS LETTERS A,2008,372(29):4943. |
| APA | Han, P,&Jia, JF.(2008).The influence of interband tunneling on leakage current in manganite/titanate heterojunction.PHYSICS LETTERS A,372(29),4943. |
| MLA | Han, P,et al."The influence of interband tunneling on leakage current in manganite/titanate heterojunction".PHYSICS LETTERS A 372.29(2008):4943. |
入库方式： OAI收割
来源：物理研究所
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