The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD
文献类型：期刊论文
| 作者 | He, T ; Li, H ; Dai, LG ; Wang, XL ; Chen, Y ; Ma, ZG ; Xu, PQ ; Jiang, Y ; Wang, L ; Jia, HQ ; Wang, WX ; Chen, H |
| 刊名 | SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
 |
| 出版日期 | 2011 |
| 卷号 | 54期号:3页码:446 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION QUANTUM-WELLS PHOTOLUMINESCENCE NITRIDE FIELDS LAYERS |
| ISSN号 | 1674-7348 |
| 通讯作者 | He, T (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Nonpolar a-plane (11 (2) over bar0) GaN films have been grown on r-plane (1 (1) over bar 02) sapphire by metal-organic chemical vapor deposition (MOCVD) under different growth pressures. The as-grown films are investigated by optical microscopy, high-resolution X-ray diffraction (HRXRD) and Raman scattering. As growth pressure rises from 100 mbar to 400 mbar, the surface gets rougher, and the in-plane XRD full width at half maximum (FWHM) along the c-axis [0001] increases while that along the m-axis [(1) over bar 100] decreases. Meanwhile, residential stresses are reduced along both the c-axis and the m-axis. The structural anisotropy feature under 400 mbar is inverted with respect to 100 mbar, and the weakened anisotropy is achieved under a moderate pressure of 200 mbar, probably due to the suppressed Ga atomic migration along the c-axis under a larger pressure. We propose that pressure can affect a-plane growth through the V/III ratio. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [60890192, 50872146] |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45247]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | He, T,Li, H,Dai, LG,et al. The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2011,54(3):446. |
| APA | He, T.,Li, H.,Dai, LG.,Wang, XL.,Chen, Y.,...&Chen, H.(2011).The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,54(3),446. |
| MLA | He, T,et al."The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 54.3(2011):446. |
入库方式： OAI收割
来源：物理研究所
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