The Kapitza resistance across grain boundary by molecular dynamics simulation
文献类型：期刊论文
| 作者 | Tang, QH ; Yao, YG |
| 刊名 | NANOSCALE AND MICROSCALE THERMOPHYSICAL ENGINEERING
 |
| 出版日期 | 2006 |
| 卷号 | 10期号:4页码:387 |
| 关键词 | THERMAL-CONDUCTIVITY THIN-FILMS PHONON-SCATTERING SILICON TRANSPORT PHASES ORDER |
| ISSN号 | 1556-7265 |
| 通讯作者 | Tang, QH (reprint author), Chinese Acad Sci, State Key Lab Nonlinear Mech, Inst Mech, 15 Beisihuanxi Rd, Beijing 100080, Peoples R China. |
| 中文摘要 | Nonequilibrium molecular dynamics (NEMD) simulations are performed to calculate thermal boundary resistance that arises from heat flow across Si grain boundary. The environment-dependent interatomic potential (EDIP) on crystal silicon is adopted as a model system. The issues are related to nonlinear response, local thermal equilibrium, and statistical averaging. The tilt grain boundaries Sigma 5 and Sigma 13 are simulated, and the values of thermal boundary resistance by nonequilibrium molecular dynamics are compared with those by Maid et al. (Solid State Communications, vol. 102, 1997). Using the disperse relation of EDIP potential, an average transmission coefficient of thermal conductivity across boundary is calculated. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45282]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Tang, QH,Yao, YG. The Kapitza resistance across grain boundary by molecular dynamics simulation[J]. NANOSCALE AND MICROSCALE THERMOPHYSICAL ENGINEERING,2006,10(4):387. |
| APA | Tang, QH,&Yao, YG.(2006).The Kapitza resistance across grain boundary by molecular dynamics simulation.NANOSCALE AND MICROSCALE THERMOPHYSICAL ENGINEERING,10(4),387. |
| MLA | Tang, QH,et al."The Kapitza resistance across grain boundary by molecular dynamics simulation".NANOSCALE AND MICROSCALE THERMOPHYSICAL ENGINEERING 10.4(2006):387. |
入库方式： OAI收割
来源：物理研究所
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