The microstructure and electrical conductivity of mixed-valence TlIn(4)S(5)Cl quaternary compound micro- and nanowires
文献类型：期刊论文
| 作者 | Jiang, X ; Deiseroth, HJ ; Gu, CZ ; Xhaxhiu, K ; Huang, Y ; Li, JJ ; Che, RC ; Wang, ZL |
| 刊名 | NANOTECHNOLOGY
 |
| 出版日期 | 2008 |
| 卷号 | 19期号:20 |
| 关键词 | X-RAY CHEMICAL SENSORS CHEMISTRY |
| ISSN号 | 0957-4484 |
| 通讯作者 | Jiang, X (reprint author), Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany. |
| 中文摘要 | Quaternary mixed-valence compound TlIn(4)S(5)Cl micro- and nanowires are prepared by partial substitution of chalcogen with halogen starting from a stoichiometric mixture of TlCl, In and S. Their electrical conductivity and gas sensitivity properties are investigated by using standard four-terminal systems. The specific nanowire resistivity is about 10(7) Omega cm and corresponds to the value of a typical undoped semiconductor in air. This resistivity is, however, extremely sensitive to NO(2) (sensitivity about 150) or NH(3), with a rapid response of about 2 s and recovery times. This phenomenon is supposed to be particularly important for future nanodevice applications. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45333]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jiang, X,Deiseroth, HJ,Gu, CZ,et al. The microstructure and electrical conductivity of mixed-valence TlIn(4)S(5)Cl quaternary compound micro- and nanowires[J]. NANOTECHNOLOGY,2008,19(20). |
| APA | Jiang, X.,Deiseroth, HJ.,Gu, CZ.,Xhaxhiu, K.,Huang, Y.,...&Wang, ZL.(2008).The microstructure and electrical conductivity of mixed-valence TlIn(4)S(5)Cl quaternary compound micro- and nanowires.NANOTECHNOLOGY,19(20). |
| MLA | Jiang, X,et al."The microstructure and electrical conductivity of mixed-valence TlIn(4)S(5)Cl quaternary compound micro- and nanowires".NANOTECHNOLOGY 19.20(2008). |
入库方式： OAI收割
来源：物理研究所
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