The microstructure and its high-temperature annealing behaviours of a-Si : O : H film
文献类型：期刊论文
| 作者 | Wang, YQ ; Chen, CY ; Chen, WD ; Yang, FH ; Diao, HW |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2001 |
| 卷号 | 50期号:12页码:2418 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION AMORPHOUS SIO2 OPTICAL-PROPERTIES SILICON |
| ISSN号 | 1000-3290 |
| 通讯作者 | Wang, YQ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China. |
| 中文摘要 | The microstructure and its annealing behaviours of a-Si:O:H film prepared by PECVD are investigated in detail using micro-Raman spectroscopy, X-ray photoelectron spectroscopy and Infrared absorption spectroscopy. The results indicate that the as-deposited a-Si:O:H film is structural inhomogeneous, with Si-riched phases surrounded by O-riched phases. The Si-riched phases are found to be nonhydrogenated amorphous silicon (a-Si) clusters, and the O-riched phases SiOx:H (x approximate to 1. 35) are formed by random bonding of Si, O and H atoms. By high-temperature annealing at 1150 degreesC, the SiOx:H (x approximate to 1.35) matrix is shown to be transformed into SiO2 and SiOx ( x approximate to 0.64), during which all of the hydrogen atoms in the film escape and some of silicon atoms are separated from the SiOx:H ( x approximate to 1.35) matrix; The separated silicon atoms are found to be participated in the nucleation and growth processes of solid-phase crystallization of the a-Si clusters, nano-crystalline silicon (ne-Si) is then formed. The microstructure of the annealed film is thereby described with a multi-shell model, in which the ne-Si clusters are embedded in SiOx (x = 0.64) and SiO2. The former is located at the boundaries of the nc-Si clusters, with a thickness comparable with the scale of nc-Si clusters, and forms the transition oxide layer between the ne-Si and the SiO2 matrix. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45334]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, YQ,Chen, CY,Chen, WD,et al. The microstructure and its high-temperature annealing behaviours of a-Si : O : H film[J]. ACTA PHYSICA SINICA,2001,50(12):2418. |
| APA | Wang, YQ,Chen, CY,Chen, WD,Yang, FH,&Diao, HW.(2001).The microstructure and its high-temperature annealing behaviours of a-Si : O : H film.ACTA PHYSICA SINICA,50(12),2418. |
| MLA | Wang, YQ,et al."The microstructure and its high-temperature annealing behaviours of a-Si : O : H film".ACTA PHYSICA SINICA 50.12(2001):2418. |
入库方式： OAI收割
来源：物理研究所
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