THE MICROSTRUCTURE OF MNSB GROWN ON (001)GAAS BY HOT-WALL EPITAXY
文献类型：期刊论文
| 作者 | XIN, Y ; BROWN, PD ; BOOTHROYD, CB ; HUMPHREYS, CJ ; TATSUOKA, H ; KUWABARA, H ; OSHITA, M ; NAKAMURA, T ; FUJIYASU, H ; NAKANISHI, Y |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1995 |
| 卷号 | 156期号:3页码:155 |
| 关键词 | FILMS |
| ISSN号 | 0022-0248 |
| 通讯作者 | XIN, Y (reprint author), UNIV CAMBRIDGE,DEPT MAT SCI & MET,PEMBROKE ST,CAMBRIDGE CB2 3QZ,ENGLAND. |
| 中文摘要 | Thin films of MnSb/(001)GaAs grown by hot wall epitaxy exhibit three distinguishable microstructures corresponding to (i) MnSb within etched grooves in the substrate; (ii) small GaSb particles above the interface; and (iii) larger grains of MnSb of two distinct orientations. The grooves in the GaAs substrate are etched during the initial stages of growth, with displaced Ga reacting to form small GaSb particles which delineate the original (001)GaAs surface. MnSb nucleates in these grooves and continues to grow to form islands of the same orientation. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45339]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | XIN, Y,BROWN, PD,BOOTHROYD, CB,et al. THE MICROSTRUCTURE OF MNSB GROWN ON (001)GAAS BY HOT-WALL EPITAXY[J]. JOURNAL OF CRYSTAL GROWTH,1995,156(3):155. |
| APA | XIN, Y.,BROWN, PD.,BOOTHROYD, CB.,HUMPHREYS, CJ.,TATSUOKA, H.,...&NAKANISHI, Y.(1995).THE MICROSTRUCTURE OF MNSB GROWN ON (001)GAAS BY HOT-WALL EPITAXY.JOURNAL OF CRYSTAL GROWTH,156(3),155. |
| MLA | XIN, Y,et al."THE MICROSTRUCTURE OF MNSB GROWN ON (001)GAAS BY HOT-WALL EPITAXY".JOURNAL OF CRYSTAL GROWTH 156.3(1995):155. |
入库方式： OAI收割
来源：物理研究所
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