中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The microwave properties of the double-sided thin film MgB2 resonator

文献类型:期刊论文

作者Wang, YF ; Shi, LB ; Chen, LP ; Luo, S ; Zhang, GH ; Zhang, XQ ; Li, CG ; Li, H ; Xiong, GC ; He, YS
刊名INTERNATIONAL JOURNAL OF MODERN PHYSICS B
出版日期2007
卷号21期号:18-19页码:3493
ISSN号0217-9792
中文摘要Double-sided magnesium diboride (MgB2) thin films have been grown on double-sided polished sapphire substrates by the technique of hybrid physical chemical vapor deposition (HPCVD). The zero resistance temperature (Tc) of the films is higher than 37 K. The microwave characteristic of the double-sided MgB2 thin films at 8.7GHz is studied systematically by the microstrip resonator technique. Surface resistance of the thin films is extracted by analyzing the resonance curves at different temperatures, and it is 1.2 m Omega at 11 K.
收录类别SCI
公开日期2013-09-23
源URL[http://ir.iphy.ac.cn/handle/311004/45342]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Wang, YF,Shi, LB,Chen, LP,et al. The microwave properties of the double-sided thin film MgB2 resonator[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B,2007,21(18-19):3493.
APA Wang, YF.,Shi, LB.,Chen, LP.,Luo, S.,Zhang, GH.,...&He, YS.(2007).The microwave properties of the double-sided thin film MgB2 resonator.INTERNATIONAL JOURNAL OF MODERN PHYSICS B,21(18-19),3493.
MLA Wang, YF,et al."The microwave properties of the double-sided thin film MgB2 resonator".INTERNATIONAL JOURNAL OF MODERN PHYSICS B 21.18-19(2007):3493.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。