The perfection of space-grown GaSb studied by X-ray topography and high-resolution diffractometry
文献类型:期刊论文
作者 | Voloshin, AE ; Lomov, AA ; Nishinaga, T ; Ge, P ; Huo, C |
刊名 | JOURNAL OF CRYSTAL GROWTH
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出版日期 | 2002 |
卷号 | 236期号:4页码:501 |
关键词 | MICROGRAVITY TE |
ISSN号 | 0022-0248 |
通讯作者 | Voloshin, AE (reprint author), Russian Acad Sci, Shubnikov Inst Crystallog, Leninsky Prosp, Moscow 117333, Russia. |
中文摘要 | Space-grown GaSb single crystal doped with Te was investigated by X-ray projection topography and high-resolution triple crystal diffractometry. It was shown that a large part of the sample grown without contacting the crucible is of rather high perfection: it is striation free and only few dislocation lines are present there. However, it was found that large microdefects (exceeding 1 mum in diameter) are present, their density being - 4 x 104 Cm-1. Nevertheless, the number of small microdefects (smaller than 1 mum in diameter) is considerably less than that in terrestrially grown GaSb. A twin boundary was found between this space-grown and the other part-grown in contact with the ampoule walls. Besides the twin, it was found that dislocations at a density up to similar to 10(4) cm(-3) were generated. The end part of the ingot contains dislocations with a density higher than 106 Cm-1, which were induced due to high thermal stresses at the final stage of crystallization. (C) 2002 Elsevier Science B.V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-23 |
源URL | [http://ir.iphy.ac.cn/handle/311004/45382] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Voloshin, AE,Lomov, AA,Nishinaga, T,et al. The perfection of space-grown GaSb studied by X-ray topography and high-resolution diffractometry[J]. JOURNAL OF CRYSTAL GROWTH,2002,236(4):501. |
APA | Voloshin, AE,Lomov, AA,Nishinaga, T,Ge, P,&Huo, C.(2002).The perfection of space-grown GaSb studied by X-ray topography and high-resolution diffractometry.JOURNAL OF CRYSTAL GROWTH,236(4),501. |
MLA | Voloshin, AE,et al."The perfection of space-grown GaSb studied by X-ray topography and high-resolution diffractometry".JOURNAL OF CRYSTAL GROWTH 236.4(2002):501. |
入库方式: OAI收割
来源:物理研究所
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