The rectifying property and magnetoresistance of La0.67Ca0.33MnO3/SiO2/Si heterojunction
文献类型：期刊论文
| 作者 | Lang, PL ; Zhao, YG ; Xiong, CM ; Wang, P ; Li, J ; Zheng, DN |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2006 |
| 卷号 | 100期号:5 |
| 关键词 | THIN-FILMS GROWTH MAGNETOTRANSPORT POLARIZATION JUNCTION SILICON FIELD LAYER |
| ISSN号 | 0021-8979 |
| 通讯作者 | Lang, PL (reprint author), Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China. |
| 中文摘要 | We have fabricated a heterojunction by depositing La0.67Ca0.33MnO3 film on electron doped silicon wafer with a buffer layer of natural SiO2. The current-voltage measurement shows that it is a diode with a good rectifying property in a wide temperature range. At high positive voltages, the current-voltage curve shows space charge limited (SCL) current behavior, manifesting itself as a SCL diode. At low positive and negative voltages, the resistance of the junction shows a peak at a certain temperature, which decreases with increasing positive voltage and keeps constant at negative voltages. Magnetoresistance of the junction shows a similar temperature dependence as the resistance of the junction. Calculations show that these phenomena can be attributed to the depletion layer of the La0.67Ca0.33MnO3 film. This work also demonstrates that SCL diode can be realized in La0.67Ca0.33MnO3/SiO2/Si with the presence of the SiO2 layer. (c) 2006 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45432]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lang, PL,Zhao, YG,Xiong, CM,et al. The rectifying property and magnetoresistance of La0.67Ca0.33MnO3/SiO2/Si heterojunction[J]. JOURNAL OF APPLIED PHYSICS,2006,100(5). |
| APA | Lang, PL,Zhao, YG,Xiong, CM,Wang, P,Li, J,&Zheng, DN.(2006).The rectifying property and magnetoresistance of La0.67Ca0.33MnO3/SiO2/Si heterojunction.JOURNAL OF APPLIED PHYSICS,100(5). |
| MLA | Lang, PL,et al."The rectifying property and magnetoresistance of La0.67Ca0.33MnO3/SiO2/Si heterojunction".JOURNAL OF APPLIED PHYSICS 100.5(2006). |
入库方式： OAI收割
来源：物理研究所
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