The synthesis of highly oriented GaN nanowire arrays
文献类型：期刊论文
| 作者 | Wang, JC ; Zhan, CZ ; Li, FG |
| 刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| 出版日期 | 2003 |
| 卷号 | 76期号:4页码:609 |
| 关键词 | GALLIUM NITRIDE NANOWIRES STRUCTURE LASER-DIODES BUILDING-BLOCKS GROWTH CARBON NANOTUBES MECHANISM NANORODS DEVICES |
| ISSN号 | 0947-8396 |
| 通讯作者 | Wang, JC (reprint author), Peking Univ, Sch Phys, Natl Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. |
| 中文摘要 | Highly oriented GaN nanowire arrays have been achieved by the catalytic reaction of gallium with ammonium. The resulting materials were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM images show that the resulting materials are nanowire arrays with a uniform length of about 10 mum. XRD, EDS, TEM and SAED indicate that the nanowire arrays are single-crystal hexagonal GaN with a wurtzite structure. They have diameters of 10 to 20 nm. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45559]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, JC,Zhan, CZ,Li, FG. The synthesis of highly oriented GaN nanowire arrays[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2003,76(4):609. |
| APA | Wang, JC,Zhan, CZ,&Li, FG.(2003).The synthesis of highly oriented GaN nanowire arrays.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,76(4),609. |
| MLA | Wang, JC,et al."The synthesis of highly oriented GaN nanowire arrays".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 76.4(2003):609. |
入库方式： OAI收割
来源：物理研究所
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