Theoretical determination of the exchange interaction and magnetization energy in fcc-Fe/Cu(001) films
文献类型：期刊论文
| 作者 | Zhou, YM ; Geng, WT ; Wang, DS |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 1998 |
| 卷号 | 57期号:9页码:5029 |
| 关键词 | PLANE-WAVE-METHOD ELECTRONIC-STRUCTURE SURFACE-STATES FE FILMS GAMMA-FE IRON FE/CU(100) MAGNETISM CU(100) |
| ISSN号 | 0163-1829 |
| 通讯作者 | Zhou, YM (reprint author), Chinese Acad Sci, Inst Phys, Surface Phys Lab, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | High quality hydrogenated amorphous silicon (a-Si:H) films have been prepared by a simple "uninterrupted growth/annealing" plasma enhanced chemical vapor deposition (PECVD) technique, combined with a subtle boron-compensated doping. These a-Si:H films possess a high photosensitivity over 10(6), and exhibit no degradation in photoconductivity and a low light-induced defect density after prolonged illumination. The central idea is to control the growth conditions adjacent to the critical point of phase transition from amorphous to crystalline state, and yet to locate the Fermi level close to the midgap. Our results show that the improved stability and photosensitivity of a-Si:H films prepared by this method can be mainly attributed to the formation of a more robust network structure and reduction in the precursors density of light-induced metastable defects. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45628]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhou, YM,Geng, WT,Wang, DS. Theoretical determination of the exchange interaction and magnetization energy in fcc-Fe/Cu(001) films[J]. PHYSICAL REVIEW B,1998,57(9):5029. |
| APA | Zhou, YM,Geng, WT,&Wang, DS.(1998).Theoretical determination of the exchange interaction and magnetization energy in fcc-Fe/Cu(001) films.PHYSICAL REVIEW B,57(9),5029. |
| MLA | Zhou, YM,et al."Theoretical determination of the exchange interaction and magnetization energy in fcc-Fe/Cu(001) films".PHYSICAL REVIEW B 57.9(1998):5029. |
入库方式： OAI收割
来源：物理研究所
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