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Theoretical study of water adsorption on the Ge(100) surface

文献类型:期刊论文

作者Cho, JH ; Kleinman, L ; Jin, KJ ; Kim, KS
刊名PHYSICAL REVIEW B
出版日期2002
卷号66期号:11
关键词ELECTRON-ENERGY-LOSS X-1 SURFACE SILICON SI(100) H2O PSEUDOPOTENTIALS DISSOCIATION SPECTROSCOPY OXIDATION CHEMISTRY
ISSN号1098-0121
通讯作者Cho, JH (reprint author), Univ Texas, Dept Phys, Austin, TX 78712 USA.
中文摘要We present first-principles density-functional calculations for the adsorption of water on the Ge(100) surface. The dissociation of water molecules into OH and H species is energetically favored over the molecular adsorption, where O forms a bond to the down atom of the Ge dimer, similar to the case of Si(100). However, on Ge(100) the energy barrier for water dissociation is calculated to be similar to0.49 eV, which is significantly larger than our previous value (0.15 eV) on Si(100). Since the molecular adsorption on Ge(100) has a relatively smaller adsorption energy of 0.33 eV compared to that (0.57 eV) on Si(100), adsorbed water molecules on Ge(100) prefer desorption rather than dissociation upon being thermally activated. This result provides an explanation for the experimental observations on Ge(100), where water does not stick easily at room temperature.
收录类别SCI
语种英语
公开日期2013-09-23
源URL[http://ir.iphy.ac.cn/handle/311004/45663]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
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GB/T 7714
Cho, JH,Kleinman, L,Jin, KJ,et al. Theoretical study of water adsorption on the Ge(100) surface[J]. PHYSICAL REVIEW B,2002,66(11).
APA Cho, JH,Kleinman, L,Jin, KJ,&Kim, KS.(2002).Theoretical study of water adsorption on the Ge(100) surface.PHYSICAL REVIEW B,66(11).
MLA Cho, JH,et al."Theoretical study of water adsorption on the Ge(100) surface".PHYSICAL REVIEW B 66.11(2002).

入库方式: OAI收割

来源:物理研究所

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