Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)
文献类型：期刊论文
| 作者 | Xu, M ; Liu, CX ; Liu, HF ; Luo, GM ; Chen, XM ; Yu, WX ; Cui, SF ; Li, JH ; Chen, H ; Mai, ZH ; Zhou, JM ; Jia, QJ ; Zheng, WL |
| 刊名 | PHYSICS LETTERS A
 |
| 出版日期 | 2002 |
| 卷号 | 299期号:1页码:79 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION RAMAN-SPECTROSCOPY PHASE EPITAXY LASER-DIODES GAAS CONDUCTIVITY PHONONS |
| ISSN号 | 0375-9601 |
| 通讯作者 | Xu, M (reprint author), Univ Montana, Inst Phys, A-8700 Leoben, Austria. |
| 中文摘要 | The thermal stability of cubic-phase GaN (c-GaN) film grown by molecular-beam epitaxy was investigated by Raman scattering spectroscopy and X-ray scattering. The results of Raman scattering shows that, after annealing at 1000degreesC, the intensity of transverse (TO) and longitudinal (LO) optical peaks from cubic phase obviously decreases while the intensity of TOb peak from the boundary effect slightly decreases, but the transformation of the hexagonal phase (alpha-GaN) can not be detected due to a little of alpha-GaN inclusion. X-ray reflectivity measurements indicate that there is a high-electron-density layer between the substrate and the GaN film, and it becomes uniform and much thinner after high-temperature annealing, counting for the Raman results of the intensity change of the TOb peak. The results of high-angle X-ray diffraction and X-ray reciprocal space mapping revealed that the relative content of alpha-GaN obviously increases after annealing at 1000degreesC, and (10 (1) over bar1) is the most stable diffraction lattice of the alpha-GaN hexagonal phase. (C) 2002 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45740]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, M,Liu, CX,Liu, HF,et al. Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)[J]. PHYSICS LETTERS A,2002,299(1):79. |
| APA | Xu, M.,Liu, CX.,Liu, HF.,Luo, GM.,Chen, XM.,...&Zheng, WL.(2002).Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001).PHYSICS LETTERS A,299(1),79. |
| MLA | Xu, M,et al."Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)".PHYSICS LETTERS A 299.1(2002):79. |
入库方式： OAI收割
来源：物理研究所
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