Thermal stability of LaAlO3/Si deposited by laser molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Lu, XB ; Zhang, X ; Huang, R ; Lu, HB ; Chen, ZH ; Xiang, WF ; He, M ; Cheng, BL ; Zhou, HW ; Wang, XP ; Wang, CZ ; Nguyen, BY |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2004 |
| 卷号 | 84期号:14页码:2620 |
| 关键词 | THIN-FILMS GATE DIELECTRICS AMORPHOUS LAALO3 SILICON SI(100) SI |
| ISSN号 | 0003-6951 |
| 通讯作者 | Lu, XB (reprint author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China. |
| 中文摘要 | High-k gate dielectric material LaAlO3 (LAO) films were deposited directly onto silicon substrates by laser molecular-beam epitaxy. The thermodynamic stability of LAO films deposited at different substrate temperatures and of LAO films postannealed at 1000 degreesC was studied by high-resolution transmission electron microscopy and capacitor-voltage measurements. These studies show that the interfacial reaction between the LAO film and silicon substrate is strongly correlated to the substrate temperature and ambient conditions. In oxygen containing ambient, the interfacial reaction often occurs not only during film deposition but also during the course of postannealing. LAO films annealed at 1000 degreesC in nitrogen ambient have better thermal stability with silicon than LAO films annealed in oxygen ambient do. Both kinds of films remain amorphous after 1000 degreesC annealing. (C) 2004 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45743]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lu, XB,Zhang, X,Huang, R,et al. Thermal stability of LaAlO3/Si deposited by laser molecular-beam epitaxy[J]. APPLIED PHYSICS LETTERS,2004,84(14):2620. |
| APA | Lu, XB.,Zhang, X.,Huang, R.,Lu, HB.,Chen, ZH.,...&Nguyen, BY.(2004).Thermal stability of LaAlO3/Si deposited by laser molecular-beam epitaxy.APPLIED PHYSICS LETTERS,84(14),2620. |
| MLA | Lu, XB,et al."Thermal stability of LaAlO3/Si deposited by laser molecular-beam epitaxy".APPLIED PHYSICS LETTERS 84.14(2004):2620. |
入库方式： OAI收割
来源：物理研究所
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