Thermal stability of Mg2Si epitaxial film formed on Si (111) substrate by solid phase reaction
文献类型：期刊论文
| 作者 | Wang, XN ; Wang, Y ; Zou, J ; Zhang, TC ; Mei, ZX ; Guo, Y ; Xue, QK ; Du, XL ; Zhang, XN ; Han, XD ; Zhang, Z |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2009 |
| 卷号 | 18期号:7页码:3079 |
| 关键词 | SEMICONDUCTING MG2SI MG/SI(111) SYSTEM THIN-FILMS INTERFACE GROWTH CRYSTALS CONTACT SILICON |
| ISSN号 | 1674-1056 |
| 通讯作者 | Du, XL (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | A single crystalline Mg2Si film was formed by solid phase reaction (SPR) of a Si(111) substrate with an Mg overlayer capped with an oxide layer(s), which was enhanced by post annealing from room temperature to 100 degrees C in a molecular beam epitaxy (MBE) system. The thermal stability of the Mg2Si film was then systematically investigated by post annealing in an oxygen-radical ambient at 300 degrees C, 450 degrees C and 650 degrees C, respectively. The Mg2Si film stayed stable until the annealing temperature reached 450 degrees C then it transformed into amorphous MgOx attributed to the decomposition of Mg2Si and the oxidization of dissociated Mg. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45745]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, XN,Wang, Y,Zou, J,et al. Thermal stability of Mg2Si epitaxial film formed on Si (111) substrate by solid phase reaction[J]. CHINESE PHYSICS B,2009,18(7):3079. |
| APA | Wang, XN.,Wang, Y.,Zou, J.,Zhang, TC.,Mei, ZX.,...&Zhang, Z.(2009).Thermal stability of Mg2Si epitaxial film formed on Si (111) substrate by solid phase reaction.CHINESE PHYSICS B,18(7),3079. |
| MLA | Wang, XN,et al."Thermal stability of Mg2Si epitaxial film formed on Si (111) substrate by solid phase reaction".CHINESE PHYSICS B 18.7(2009):3079. |
入库方式： OAI收割
来源：物理研究所
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