Thickness-dependent metal-insulator transition in V2O3 ultrathin films
文献类型：期刊论文
| 作者 | Luo, Q ; Guo, QL ; Wang, EG |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2004 |
| 卷号 | 84期号:13页码:2337 |
| 关键词 | VANADIUM-OXIDE V2O3(0001) GROWTH PHASE AU(111) THIN SPIN XPS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Guo, QL (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | In this study, V2O3 ultrathin films about 5-20 nm thick were prepared on Al2O3 (0001) substrates through a reactive. evaporation process. Auger electron spectroscopy and x-ray photoelectron spectroscopy have been, used in situ to characterize their compositions and chemical states. Electric resistance measurements show that V2O3 films transform from metallic to semiconducting with the decrease of film thickness, which results from the a(1g) level rising because the lattice mismatch between the substrate and the film expands the c/a parameter ratio. No temperature-induced metal-insulator transition (Like that in bulk V2O3) was observed in V2O3 thin films at low temperature. We conclude that stress plays a major role in suppressing the temperature-induced metal-insulator transition. (C) 2004 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45831]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Luo, Q,Guo, QL,Wang, EG. Thickness-dependent metal-insulator transition in V2O3 ultrathin films[J]. APPLIED PHYSICS LETTERS,2004,84(13):2337. |
| APA | Luo, Q,Guo, QL,&Wang, EG.(2004).Thickness-dependent metal-insulator transition in V2O3 ultrathin films.APPLIED PHYSICS LETTERS,84(13),2337. |
| MLA | Luo, Q,et al."Thickness-dependent metal-insulator transition in V2O3 ultrathin films".APPLIED PHYSICS LETTERS 84.13(2004):2337. |
入库方式： OAI收割
来源：物理研究所
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