Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction
文献类型：期刊论文
| 作者 | Zhang, YC ; Xing, ZG ; Ma, ZG ; Chen, Y ; Ding, GJ ; Xu, PQ ; Dong, CM ; Chen, H ; Le, XY |
| 刊名 | SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
 |
| 出版日期 | 2010 |
| 卷号 | 53期号:3页码:465 |
| ISSN号 | 1674-7348 |
| 关键词 | LIGHT-EMITTING-DIODES PHONON DEFORMATION POTENTIALS FILMS EPITAXY ALN |
| 通讯作者 | Zhang, YC (reprint author), Beihang Univ, Sch Phys & Nucl Energy Engn, Beijing 100190, Peoples R China. |
| 中文摘要 | GaN epifilms are grown on the patterned sapphire substrates (PSS) (0001) and the conventional sapphire substrates (CSS) (0001) by metal-organic chemical vapor deposition (MOCVD) using a novel two-step growth. High resolution X-ray diffraction (HR-XRD) is used to investigate the threading dislocation (TD) density of the GaN epifilms. The TD density is calculated from the omega-scans full width at half maximum (FWHM) results of HR-XRD. The edge dislocation destiny of GaN grown on the PSS is 2.7x10(8) cm(-2), which is less than on the CSS. This is confirmed by the results of atomic force microscopy (AFM) measurement. The lower TD destiny indicates that the crystalline quality of the GaN epifilms grown on the PSS is improved compared to GaN epifilms grown on the CSS. The residual strains of GaN grown on the PSS and CSS are compared by Raman Scattering spectra. It is clearly seen that the residual strain in the GaN grown on PSS is lower than on the CSS. |
| 资助信息 | National Natural Science Foundation of China [60877006, 50872146] |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45862]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, YC,Xing, ZG,Ma, ZG,et al. Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2010,53(3):465. |
| APA | Zhang, YC.,Xing, ZG.,Ma, ZG.,Chen, Y.,Ding, GJ.,...&Le, XY.(2010).Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,53(3),465. |
| MLA | Zhang, YC,et al."Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 53.3(2010):465. |
入库方式： OAI收割
来源：物理研究所
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