Th-reading dislocations in Ba0.7Sr0.3TiO3/La0.7Sr0.3MnO3 epitaxial films grown on (001)LaAlO3 substrate
文献类型:期刊论文
作者 | Qi, XY ; Miao, J ; Duan, XF ; Zhao, BR |
刊名 | MATERIALS LETTERS
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出版日期 | 2006 |
卷号 | 60期号:16页码:2009 |
关键词 | BA0.5SR0.5TIO3 FILMS LAALO3 CAPACITORS DENSITY DEVICES |
ISSN号 | 0167-577X |
通讯作者 | Duan, XF (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing Lab Electron Microscopy, Beijing 100080, Peoples R China. |
中文摘要 | The microstructures of Ba0.7Sr0.3TiO3/La0.7Sr0.3MnO3 (BST/LSMO) thin films epitaxially grown on (001) LaAlO3 substrate by pulsed laser deposition were investigated by transmission electron microscopy (TEM) and related techniques. Both cross-sectional and plan-view TEM specimens were studied. The predominant defects in the films are a high density of threading dislocations (TDs) perpendicular or quasiperpendicular to the substrate surface. Diffraction contrast and high-resolution transmission electron microscopy (HRTEM) techniques reveal that the TDs are mostly pure-edge-type with Burgers vectors b=< 100 > or < 110 >. There are a few TDs of screw character, and convergent beam electron diffraction (CBED) analysis shows the screw component of their Burgers vectors is +/-[001]. The formation mechanisms of the TDs are discussed. (c) 2005 Elsevier B.V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-23 |
源URL | [http://ir.iphy.ac.cn/handle/311004/45863] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Qi, XY,Miao, J,Duan, XF,et al. Th-reading dislocations in Ba0.7Sr0.3TiO3/La0.7Sr0.3MnO3 epitaxial films grown on (001)LaAlO3 substrate[J]. MATERIALS LETTERS,2006,60(16):2009. |
APA | Qi, XY,Miao, J,Duan, XF,&Zhao, BR.(2006).Th-reading dislocations in Ba0.7Sr0.3TiO3/La0.7Sr0.3MnO3 epitaxial films grown on (001)LaAlO3 substrate.MATERIALS LETTERS,60(16),2009. |
MLA | Qi, XY,et al."Th-reading dislocations in Ba0.7Sr0.3TiO3/La0.7Sr0.3MnO3 epitaxial films grown on (001)LaAlO3 substrate".MATERIALS LETTERS 60.16(2006):2009. |
入库方式: OAI收割
来源:物理研究所
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