Three-step growth optimization of AlN epilayers by MOCVD
文献类型：期刊论文
| 作者 | Peng, MZ ; Guo, LW ; Zhang, J ; Yu, NS ; Zhu, XL ; Yan, JF ; Ge, BH ; Jia, HQ ; Chen, H ; Zhou, JM |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:6页码:2265 |
| 关键词 | X-RAY-DIFFRACTION LIGHT-EMITTING-DIODES GAN FILMS SAPPHIRE AIN |
| ISSN号 | 0256-307X |
| 通讯作者 | Peng, MZ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | A three-step growth process is developed for depositing high-quality aluminium-nitride (AlN) epilayers on (001) sapphire by low pressure metalorganic chemical vapour deposition (LP-MOCVD). We adopt a low temperature (LT) AlN nucleation layer (NL), and two high temperature (HT) AlN layers with different V/III ratios. Our results reveal that the optimal NL temperature is 840 - 880 degrees C, and there exists a proper growth switching from low to high V/III ratio for further reducing threading dislocations (TDs). The screw-type TD density of the optimized AlN film is just 7.86 x 10(6) cm(-2), about three orders lower than its edge-type one of 2 x 10(9) cm(-2) estimated by high-resolution x-ray diffraction (HRXRD) and cross-sectional transmission electron microscopy (TEM). |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45886]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Peng, MZ,Guo, LW,Zhang, J,et al. Three-step growth optimization of AlN epilayers by MOCVD[J]. CHINESE PHYSICS LETTERS,2008,25(6):2265. |
| APA | Peng, MZ.,Guo, LW.,Zhang, J.,Yu, NS.,Zhu, XL.,...&Zhou, JM.(2008).Three-step growth optimization of AlN epilayers by MOCVD.CHINESE PHYSICS LETTERS,25(6),2265. |
| MLA | Peng, MZ,et al."Three-step growth optimization of AlN epilayers by MOCVD".CHINESE PHYSICS LETTERS 25.6(2008):2265. |
入库方式： OAI收割
来源：物理研究所
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