Time evolution of the microstructures of LaAlO3 thin films grown on Si substrates
文献类型：期刊论文
| 作者 | Li, XL ; Xiang, WF ; Jing, HY ; Lu, HB ; Mai, ZH |
| 刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| 出版日期 | 2006 |
| 卷号 | 84期号:3页码:341 |
| 关键词 | GATE DIELECTRICS STABILITY SILICON SI(001) DEPOSITION LAYERS |
| ISSN号 | 0947-8396 |
| 通讯作者 | Li, XL (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The structure and stability of amorphous LaAlO3 thin films deposited on Si substrates were investigated by an X-ray reflectivity technique. The results show that the film/substrate interface contains a LaxAlyOzSi layer and a SiOx layer. X-ray reflectivity profiles showed a continuous change after the films were exposed to ambient air for six months at room temperature. The X-ray reflectivity simulations suggest a diffusion of La and Al (mostly La) from the LaAlO3 layer to the LaxAlyOzSi layer. This process stopped after about six months, and then the films reached a relative equilibrium state. Moreover, post-air-exposure annealing at 300 degrees C in air atmosphere could not change the final distributions of La and Al along the normal to the film's substrate. On the other hand, the leakage-current density slightly decreases after annealing at 300 degrees C, which might be caused by the decrease of oxygen vacancies in the films. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45906]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, XL,Xiang, WF,Jing, HY,et al. Time evolution of the microstructures of LaAlO3 thin films grown on Si substrates[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2006,84(3):341. |
| APA | Li, XL,Xiang, WF,Jing, HY,Lu, HB,&Mai, ZH.(2006).Time evolution of the microstructures of LaAlO3 thin films grown on Si substrates.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,84(3),341. |
| MLA | Li, XL,et al."Time evolution of the microstructures of LaAlO3 thin films grown on Si substrates".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 84.3(2006):341. |
入库方式： OAI收割
来源：物理研究所
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