Time-Dependent Local Potential Induced by Scanning Gate Microscopy
文献类型：期刊论文
| 作者 | Wang, ZZ ; Chen, DM ; Ota, T ; Fujisawa, T |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2009 |
| 卷号 | 48期号:4 |
| 关键词 | QUANTUM POINT-CONTACT FLOW |
| ISSN号 | 0021-4922 |
| 通讯作者 | Wang, ZZ (reprint author), NTT Corp, NTT Basic Res Labs, 3-1 Morinosato Wakamiya, Kanagawa 2430198, Japan. |
| 中文摘要 | Double magnetic tunnel junctions (DMTJs) have been fabricated using alumina barriers with NiFe particles (similar to 1.8 nm) embedded within. The junctions exhibit spin-dependent transport properties and Coulomb blockade effects. We study differences between control samples and the DMTJs; specifically I-V characteristics and tunnel magnetoresistance (TMR) versus bias voltage characteristics. Clear differences in the systems are evident: the DMTJ with NiFe particles shows a marked peak in TMR at low bias, whereas the dependence of TMR on bias is much weaker for the control MTJ without embedded particles. Hence the TMR at low bias is enhanced by the Coulomb blockade effects. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3072721] |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45916]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, ZZ,Chen, DM,Ota, T,et al. Time-Dependent Local Potential Induced by Scanning Gate Microscopy[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2009,48(4). |
| APA | Wang, ZZ,Chen, DM,Ota, T,&Fujisawa, T.(2009).Time-Dependent Local Potential Induced by Scanning Gate Microscopy.JAPANESE JOURNAL OF APPLIED PHYSICS,48(4). |
| MLA | Wang, ZZ,et al."Time-Dependent Local Potential Induced by Scanning Gate Microscopy".JAPANESE JOURNAL OF APPLIED PHYSICS 48.4(2009). |
入库方式： OAI收割
来源：物理研究所
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