中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Time-dependent oscillations of tunneling current on partially oxidized Si(111) surfaces

文献类型:期刊论文

作者Xie, F ; von Blanckenhagen, P
刊名APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
出版日期2001
卷号72页码:S217
ISSN号0947-8396
通讯作者von Blanckenhagen, P (reprint author), Forschungszentrum Karlsruhe, Inst Nanotechnol, Postfach 3640, D-76021 Karlsruhe, Germany.
中文摘要Clean and partially oxidized Si (111) surfaces were investigated by scanning tunneling microscopy and spectroscopy (STM/STS). In contrast to STS spectra measured on clean Si surfaces, time-dependent periodic oscillations of tunneling current were detected on partially oxidized Si surfaces. The STM current images of the clean Si surface with atomic resolution and the partially oxidized Si surfaces were analyzed by two-dimensional fast Fourier transformation (2D-FFT). The oscillation frequencies determined by STS and Fourier analysis are roughly multiples of a basic frequency of 30 Hz. The oscillations disappear at small tip sample distance.
收录类别SCI
语种英语
公开日期2013-09-23
源URL[http://ir.iphy.ac.cn/handle/311004/45917]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Xie, F,von Blanckenhagen, P. Time-dependent oscillations of tunneling current on partially oxidized Si(111) surfaces[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2001,72:S217.
APA Xie, F,&von Blanckenhagen, P.(2001).Time-dependent oscillations of tunneling current on partially oxidized Si(111) surfaces.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,72,S217.
MLA Xie, F,et al."Time-dependent oscillations of tunneling current on partially oxidized Si(111) surfaces".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 72(2001):S217.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。