Tip-induced band bending effect and local electronic structure of Al nanoclusters on Si(111)
文献类型：期刊论文
| 作者 | Narita, H ; Kimura, A ; Taniguchi, M ; Nakatake, M ; Xie, T ; Qiao, S ; Namatame, H ; Yang, S ; Zhang, L ; Wang, EG |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2008 |
| 卷号 | 78期号:11 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY SURFACE GROWTH ARRAYS STATES |
| ISSN号 | 1098-0121 |
| 通讯作者 | Narita, H (reprint author), Hiroshima Univ, Grad Sch Sci, 1-3-1 Kagamiyama, Hiroshima 7398526, Japan. |
| 中文摘要 | Scanning tunneling microscopy and scanning tunneling spectroscopy (STS) have been examined for an Al nanocluster periodic array grown on p-type silicon substrate. Local density of states at Al and Si sites within the nanocluster has been extracted from site-resolved STS spectra by taking into account tip-induced band bending (TIBB) effect. Besides, it has been clarified that the surface-potential- energy shift caused by TIBB effect directly influences the tunneling current spectra. Consequently, a good correspondence has been found between the experimental spectra and the theoretical local density of states except for the energy gap. The energy gap has been experimentally determined as 1.7 eV, which is much larger than the predicted value. This discrepancy could be ascribed to the local-density approximation rather than the TIBB effect. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45943]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Narita, H,Kimura, A,Taniguchi, M,et al. Tip-induced band bending effect and local electronic structure of Al nanoclusters on Si(111)[J]. PHYSICAL REVIEW B,2008,78(11). |
| APA | Narita, H.,Kimura, A.,Taniguchi, M.,Nakatake, M.,Xie, T.,...&Wang, EG.(2008).Tip-induced band bending effect and local electronic structure of Al nanoclusters on Si(111).PHYSICAL REVIEW B,78(11). |
| MLA | Narita, H,et al."Tip-induced band bending effect and local electronic structure of Al nanoclusters on Si(111)".PHYSICAL REVIEW B 78.11(2008). |
入库方式： OAI收割
来源：物理研究所
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