Topological Insulator Thin Films of Bi2Te3 with Controlled Electronic Structure
文献类型：期刊论文
| 作者 | Wang, G ; Zhu, XG ; Sun, YY ; Li, YY ; Zhang, T ; Wen, J ; Chen, X ; He, K ; Wang, LL ; Ma, XC ; Jia, JF ; Zhang, SBB ; Xue, QK |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2011 |
| 卷号 | 23期号:26页码:2929 |
| 关键词 | SINGLE DIRAC CONE SURFACE TRANSPORT BI2SE3 LIMIT |
| ISSN号 | 0935-9648 |
| 通讯作者 | Zhang, SBB (reprint author), Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA. |
| 中文摘要 | Topological insulator thin films of Bi2Te3 with controlled electronic structure can be grown by regulating the molecular beam epitaxy (MBE) growth kinetics without any extrinsic doping. N- to p-type conversion results from the change in the concentrations of Te-Bi donors and Bi-Te acceptors. This represents a step toward controlling topological surface states, with potential applications in devices. |
| 收录类别 | SCI |
| 资助信息 | National Science Foundation; Ministry of Science & Technology of China; US Department of Energy [DE-SC0002623]; NSF TeraGrid at TACC [TG-DMR100014] |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/45978]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, G,Zhu, XG,Sun, YY,et al. Topological Insulator Thin Films of Bi2Te3 with Controlled Electronic Structure[J]. ADVANCED MATERIALS,2011,23(26):2929. |
| APA | Wang, G.,Zhu, XG.,Sun, YY.,Li, YY.,Zhang, T.,...&Xue, QK.(2011).Topological Insulator Thin Films of Bi2Te3 with Controlled Electronic Structure.ADVANCED MATERIALS,23(26),2929. |
| MLA | Wang, G,et al."Topological Insulator Thin Films of Bi2Te3 with Controlled Electronic Structure".ADVANCED MATERIALS 23.26(2011):2929. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。