中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Transient properties in two-level atoms near a photonic band edge

文献类型:期刊论文

作者Xu, XS ; Cheng, BY ; Zhang, DZ
刊名LASER PHYSICS
出版日期2004
卷号14期号:5页码:708
关键词INHIBITED SPONTANEOUS EMISSION GAIN GAP
ISSN号1054-660X
通讯作者Xu, XS (reprint author), Chinese Acad Sci, Inst Phys, Opt Phys Lab, Beijing 100080, Peoples R China.
中文摘要Using the response formula of photonic crystals and Bloch equations, we analyzed the coherent emission in a two-level atom embedded in an arbitrary photonic crystal. We derived a formula for the transient emission expressed by the photon density of states (DOS), the Rabi frequency, and the background decay. Near the band edge, when the ratio of the Rabi frequency to the decay rate is a proper value, a transient gain occurs and the sharp structures of the DOS near the band edge lead to a drastic enhancement of the emission and the oscillation of the emission.
收录类别SCI
语种英语
公开日期2013-09-23
源URL[http://ir.iphy.ac.cn/handle/311004/46027]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Xu, XS,Cheng, BY,Zhang, DZ. Transient properties in two-level atoms near a photonic band edge[J]. LASER PHYSICS,2004,14(5):708.
APA Xu, XS,Cheng, BY,&Zhang, DZ.(2004).Transient properties in two-level atoms near a photonic band edge.LASER PHYSICS,14(5),708.
MLA Xu, XS,et al."Transient properties in two-level atoms near a photonic band edge".LASER PHYSICS 14.5(2004):708.

入库方式: OAI收割

来源:物理研究所

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