Transient properties in two-level atoms near a photonic band edge
文献类型:期刊论文
作者 | Xu, XS ; Cheng, BY ; Zhang, DZ |
刊名 | LASER PHYSICS
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出版日期 | 2004 |
卷号 | 14期号:5页码:708 |
关键词 | INHIBITED SPONTANEOUS EMISSION GAIN GAP |
ISSN号 | 1054-660X |
通讯作者 | Xu, XS (reprint author), Chinese Acad Sci, Inst Phys, Opt Phys Lab, Beijing 100080, Peoples R China. |
中文摘要 | Using the response formula of photonic crystals and Bloch equations, we analyzed the coherent emission in a two-level atom embedded in an arbitrary photonic crystal. We derived a formula for the transient emission expressed by the photon density of states (DOS), the Rabi frequency, and the background decay. Near the band edge, when the ratio of the Rabi frequency to the decay rate is a proper value, a transient gain occurs and the sharp structures of the DOS near the band edge lead to a drastic enhancement of the emission and the oscillation of the emission. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-23 |
源URL | [http://ir.iphy.ac.cn/handle/311004/46027] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Xu, XS,Cheng, BY,Zhang, DZ. Transient properties in two-level atoms near a photonic band edge[J]. LASER PHYSICS,2004,14(5):708. |
APA | Xu, XS,Cheng, BY,&Zhang, DZ.(2004).Transient properties in two-level atoms near a photonic band edge.LASER PHYSICS,14(5),708. |
MLA | Xu, XS,et al."Transient properties in two-level atoms near a photonic band edge".LASER PHYSICS 14.5(2004):708. |
入库方式: OAI收割
来源:物理研究所
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