Transition films from amporphous to microcrystalline silicon and solar cells
文献类型：期刊论文
| 作者 | Hao, HY ; Kong, GL ; Zeng, XB ; Xu, Y ; Diao, HW ; Liao, XB |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2005 |
| 卷号 | 54期号:7页码:3327 |
| 关键词 | OPEN-CIRCUIT VOLTAGE AMORPHOUS-SILICON ABSORPTION SCATTERING |
| ISSN号 | 1000-3290 |
| 通讯作者 | Hao, HY (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China. |
| 中文摘要 | A series of hydrogenated silicon films near the threshold of crystallinity was prepared by very high frequency plasmaenhanced chemical vapor deposition (VHF-PECVD)from a mixture of SiH4 diluted in H-2. The effect of hydrogen dilution ratios R = [H-2]/[SiH4] on the microstructure of the films was investigated. The photoelectronic properties and stability of the films were studied as a function of crystalline fraction. The results show that the diphasic films gain both the fine photoelectric properties like a-Si: H and high stability like mu w-Si:H. By using the diphasic silicon films as the intrinsic layer, p-i-n junction solar cells were prepared. Current-voltage (J-V) characteristics and stability of the solar cells were measured under an AM1.5 solar simulator. We observed a light-induced increase of 5.2% in the open-circuit voltage (V-oc) and a light-induced degradation of similar to 2.9% inefficiency. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46031]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Hao, HY,Kong, GL,Zeng, XB,et al. Transition films from amporphous to microcrystalline silicon and solar cells[J]. ACTA PHYSICA SINICA,2005,54(7):3327. |
| APA | Hao, HY,Kong, GL,Zeng, XB,Xu, Y,Diao, HW,&Liao, XB.(2005).Transition films from amporphous to microcrystalline silicon and solar cells.ACTA PHYSICA SINICA,54(7),3327. |
| MLA | Hao, HY,et al."Transition films from amporphous to microcrystalline silicon and solar cells".ACTA PHYSICA SINICA 54.7(2005):3327. |
入库方式： OAI收割
来源：物理研究所
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