Transmission electron microscopic studies of ternary FeNi-silicide layers prepared by metal vapour vacuum are ion implantation
文献类型：期刊论文
| 作者 | Li, XN ; Jin, S ; Dong, C ; Zhang, Z ; Gong, ZX ; Ma, TC |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 1997 |
| 卷号 | 304期号:1-2页码:196 |
| 关键词 | PHASE-TRANSITION FESI2 |
| ISSN号 | 0040-6090 |
| 中文摘要 | A metal vapour vacuum are (MEVVA) ion source is used for the fabrication of a gamma-Fe1-xNixSi2 (x approximate to 0.4) layer via the sequential implantation of Ni and Fe into (100) oriented silicon (Si) substrate. After annealing at 500 degrees C for 30 min, a ''Fe0.6Ni0.4Si2/Fe0.4Ni0.6Si2/Si'' structure appears. The Fe-rich Fe0.6Ni0.4Si2 has a beta-structure, while Ni-rich Ni0.6Fe0.4Si2 has the same unit cell as NiSi2 phase. The twinned beta-Fe0.6Ni0.4Si2 layer occurs predominantly in the orientation relationships with respect to the fluorite Fe0.4Ni0.6Si2. Increasing the temperature to 700 degrees C results in the presence of the mixture of beta-FeSi2, beta-Fe0.7Ni0.3Si2 and fluorite Fe0.3Ni0.7Si2. Annealing at 850 degrees C causes transition into the beta-FeSi2 and the fluorite Fe0.3Ni0.7Si2, The implantation at the same energy and sequence but with a double dose results in the separation of the original gamma-Fe0.6Ni0.4Si2 into beta-Fe1-xNixSi2 and fluorite Fe1-yNiySi2 phases. (C) 1997 Elsevier Science S.A. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46045]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, XN,Jin, S,Dong, C,et al. Transmission electron microscopic studies of ternary FeNi-silicide layers prepared by metal vapour vacuum are ion implantation[J]. THIN SOLID FILMS,1997,304(1-2):196. |
| APA | Li, XN,Jin, S,Dong, C,Zhang, Z,Gong, ZX,&Ma, TC.(1997).Transmission electron microscopic studies of ternary FeNi-silicide layers prepared by metal vapour vacuum are ion implantation.THIN SOLID FILMS,304(1-2),196. |
| MLA | Li, XN,et al."Transmission electron microscopic studies of ternary FeNi-silicide layers prepared by metal vapour vacuum are ion implantation".THIN SOLID FILMS 304.1-2(1997):196. |
入库方式： OAI收割
来源：物理研究所
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