Transmission electron microscopy and atomic force microscopy studies of GaN films grown on AlAs/GaAs(001) substrates
文献类型：期刊论文
| 作者 | Hu, GQ ; Wan, L ; Duan, XF ; Chen, H ; Li, DS ; Han, YJ ; Huang, Q ; Zhou, JM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2003 |
| 卷号 | 252期号:4页码:517 |
| 关键词 | MOLECULAR-BEAM EPITAXY HEXAGONAL GAN NUCLEATION GAAS |
| ISSN号 | 0022-0248 |
| 通讯作者 | Hu, GQ (reprint author), Chinese Acad Sci, Beijing Lab Electron Microscopy, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Hexagonal GaN (H-GaN) films have been grown on GaAs(0 0 1) substrates with AlAs buffer layers in a molecular beam epitaxy system. Transmission electron microscopy observations show the tilt of the sub-grains of H-GaN film with respect to the substrate. Such mis-orientation is derived from the steps on AlAs surface due to nitridation. Atomic force microscopy observations show a large density of pinholes on the surface of GaN film grown this way. But when an AlN buffer layer is applied, on AlAs/GaAs(0 0 1) substrate, the quality of the GaN film can be much improved with the elimination of mis-orientation and pinholes. (C) 2003 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46046]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Hu, GQ,Wan, L,Duan, XF,et al. Transmission electron microscopy and atomic force microscopy studies of GaN films grown on AlAs/GaAs(001) substrates[J]. JOURNAL OF CRYSTAL GROWTH,2003,252(4):517. |
| APA | Hu, GQ.,Wan, L.,Duan, XF.,Chen, H.,Li, DS.,...&Zhou, JM.(2003).Transmission electron microscopy and atomic force microscopy studies of GaN films grown on AlAs/GaAs(001) substrates.JOURNAL OF CRYSTAL GROWTH,252(4),517. |
| MLA | Hu, GQ,et al."Transmission electron microscopy and atomic force microscopy studies of GaN films grown on AlAs/GaAs(001) substrates".JOURNAL OF CRYSTAL GROWTH 252.4(2003):517. |
入库方式： OAI收割
来源：物理研究所
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