Transmission electron microscopy study of epitaxial InN thin films grown on c-plane sapphire
文献类型：期刊论文
| 作者 | Lu, CJ ; Duan, XF ; Lu, H ; Schaff, WJ |
| 刊名 | JOURNAL OF MATERIALS RESEARCH
 |
| 出版日期 | 2006 |
| 卷号 | 21期号:7页码:1693 |
| 关键词 | MOLECULAR-BEAM EPITAXY FUNDAMENTAL-BAND GAP VAPOR-PHASE EPITAXY THREADING DISLOCATIONS BUFFER LAYER POLARITY DEFECTS |
| ISSN号 | 0884-2914 |
| 通讯作者 | Lu, CJ (reprint author), Hubei Univ, Dept Mat Sci & Engn, Wuhan 430062, Hubei, Peoples R China. |
| 中文摘要 | High-quality epitaxial InN thin films grown on (0001) sapphire with GaN buffer were characterized using transmission electron microscopy. It was found that the GaN buffer layer exhibits the (0001) Ga polarity and the InN film has In-terminated polarity. At the InN/GaN interface, there exists a high density of misfit dislocation (MD) array. Perfect edge threading dislocations (TDs) with (1/3) 1120) Burgers vectors are predominant defects that penetrate the GaN and InN layers. Pure screw and mixed TDs were also observed. Overall, the TD density decreases during film growth due to annihilation and fusion. The TD density in GaN is as high as similar to 1.5 x 10(11) cm(-2), and it drops rapidly to similar to 2.2 x 10(10) cm(-2) in InN films. Most half-loops in GaN are connected with MD segments at the InN/GaN interface to form loops, while some TD segments threaded the interface. Half-loops were also generated during the initial stages of InN growth. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46057]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lu, CJ,Duan, XF,Lu, H,et al. Transmission electron microscopy study of epitaxial InN thin films grown on c-plane sapphire[J]. JOURNAL OF MATERIALS RESEARCH,2006,21(7):1693. |
| APA | Lu, CJ,Duan, XF,Lu, H,&Schaff, WJ.(2006).Transmission electron microscopy study of epitaxial InN thin films grown on c-plane sapphire.JOURNAL OF MATERIALS RESEARCH,21(7),1693. |
| MLA | Lu, CJ,et al."Transmission electron microscopy study of epitaxial InN thin films grown on c-plane sapphire".JOURNAL OF MATERIALS RESEARCH 21.7(2006):1693. |
入库方式： OAI收割
来源：物理研究所
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