Transmission electron microscopy study of the microstructure of a GaN film grown on sapphire by organometallic vapor phase epitaxy
文献类型：期刊论文
| 作者 | Yu, DP ; Chen, LS ; Zhang, GY ; Tong, YZ ; Yang, ZJ ; Jin, SX ; You, LP ; Liu, ZQ ; Zhang, Z |
| 刊名 | DEFECT AND DIFFUSION FORUM
 |
| 出版日期 | 1997 |
| 卷号 | 148页码:122 |
| 关键词 | AIN BUFFER LAYER DIODES MOVPE |
| ISSN号 | 1012-0386 |
| 中文摘要 | The microstructure feature of the multilayered Gallium Nitride (GaN) films grown by using metalorganic vapor phase epitaxy (MOVPE) method, was analyzed by means of cross-sectional transmission electron microscopy (TEM). A GaN buffer layer predeposited at low temperature of 550 degrees C on the (0001) surface of the sapphire was revealed to be predominantly of a cubic phase (c-GaN). Hexagonal (h-GaN) epitaxial film was grown on the (111) surface of the c-GaN buffer layer in a subsequent high temperature deposition. A large number of domain structure was observed in the GaN epilayer, with their displacement vector parallel to the [0001] c axis. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46065]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu, DP,Chen, LS,Zhang, GY,et al. Transmission electron microscopy study of the microstructure of a GaN film grown on sapphire by organometallic vapor phase epitaxy[J]. DEFECT AND DIFFUSION FORUM,1997,148:122. |
| APA | Yu, DP.,Chen, LS.,Zhang, GY.,Tong, YZ.,Yang, ZJ.,...&Zhang, Z.(1997).Transmission electron microscopy study of the microstructure of a GaN film grown on sapphire by organometallic vapor phase epitaxy.DEFECT AND DIFFUSION FORUM,148,122. |
| MLA | Yu, DP,et al."Transmission electron microscopy study of the microstructure of a GaN film grown on sapphire by organometallic vapor phase epitaxy".DEFECT AND DIFFUSION FORUM 148(1997):122. |
入库方式： OAI收割
来源：物理研究所
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