Transmission electron microscopy study of triple-ribbon contrast features in a ZnTe epitaxial layer
文献类型：期刊论文
| 作者 | Han, PD |
| 刊名 | PHILOSOPHICAL MAGAZINE LETTERS
 |
| 出版日期 | 1998 |
| 卷号 | 78期号:3页码:203 |
| 关键词 | THREADING DISLOCATION DENSITIES II-VI COMPOUNDS MISFIT DISLOCATIONS SEMICONDUCTORS ORIGIN FILMS |
| ISSN号 | 0950-0839 |
| 通讯作者 | Han, PD (reprint author), Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. |
| 中文摘要 | A transmission electron microscopy study of triple-ribbon contrast features in a ZnTe layer grown epitaxially on a vicinal GaAs (001) substrate is reported. The ribbons go through the layer as threading dislocations near the [<(11)over bar 2>](111) or [112](<(11)over bar 1>) directions. Each of these (with a 40 nm width) has two narrow parts enclosed by three partial dislocations (with a 20 nm spacing). By contrast analysis and contrast simulation, the ribbons have been shown to be composed of two partially overlapping stacking faults. Their origin is attributed to a forced reaction between two crossing perfect misfit dislocations. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46066]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Han, PD. Transmission electron microscopy study of triple-ribbon contrast features in a ZnTe epitaxial layer[J]. PHILOSOPHICAL MAGAZINE LETTERS,1998,78(3):203. |
| APA | Han, PD.(1998).Transmission electron microscopy study of triple-ribbon contrast features in a ZnTe epitaxial layer.PHILOSOPHICAL MAGAZINE LETTERS,78(3),203. |
| MLA | Han, PD."Transmission electron microscopy study of triple-ribbon contrast features in a ZnTe epitaxial layer".PHILOSOPHICAL MAGAZINE LETTERS 78.3(1998):203. |
入库方式： OAI收割
来源：物理研究所
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