中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Transmission electron microscopy study on domain structures in Bi3TiNbO9 ceramics

文献类型:期刊论文

作者Su, D ; Zhu, JS ; Xu, QY ; Liu, JS ; Wang, YN
刊名MICROELECTRONIC ENGINEERING
出版日期2003
卷号66期号:1-4页码:825
关键词SUBSTITUTED BISMUTH TITANATE PLATINUM-ELECTRODES SRBI2TA2O9 CERAMICS FATIGUE-FREE MEMORIES
ISSN号0167-9317
通讯作者Zhu, JS (reprint author), Nanjing Univ, Natl Lab Solid State Microstruct, Dept Phys, Nanjing 210093, Peoples R China.
中文摘要Silicon-on-diamond (SOD) structured wafer with 4-inch diameter was fabricated by the technologies of CVD diamond deposition, Si wafer bonding and thinning. Diamond thin film with high quality and low interface state density was uniformly deposited on Silicon (001) substrate, continuous H+ ion bombardment to as-grown film surface under DC bias was performed to decrease the intrinsic tensile stress in the film. Bonding and thinning technology of Si wafers were applied for forming the holder and device layer of SOD structured wafer. The 54HC139 SOD logical circuits were fabricated on SOD wafer to evaluate the properties of diamond layer in SOD structured wafer. The results present that SOD circuits have obvious ability of irradiation hardness to gamma-ray total and instantaneous doses than those of bulk Si circuits, and it can also work at high temperature of 300 degreesC. The SOD circuits can keep normal logical function at the total dose of 10(6) Rad(Si) and instantaneous dose of 10(11) Rad(Si). The properties of irradiation hardness and high temperature work for SOD circuits can be attribute to the high hole mobility and thermal conductivity of diamond film. (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-23
源URL[http://ir.iphy.ac.cn/handle/311004/46067]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Su, D,Zhu, JS,Xu, QY,et al. Transmission electron microscopy study on domain structures in Bi3TiNbO9 ceramics[J]. MICROELECTRONIC ENGINEERING,2003,66(1-4):825.
APA Su, D,Zhu, JS,Xu, QY,Liu, JS,&Wang, YN.(2003).Transmission electron microscopy study on domain structures in Bi3TiNbO9 ceramics.MICROELECTRONIC ENGINEERING,66(1-4),825.
MLA Su, D,et al."Transmission electron microscopy study on domain structures in Bi3TiNbO9 ceramics".MICROELECTRONIC ENGINEERING 66.1-4(2003):825.

入库方式: OAI收割

来源:物理研究所

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