Transport properties of topological insulator Bi2Se3 thin films in tilted magnetic fields
文献类型：期刊论文
| 作者 | Wang, XX ; He, XY ; Guan, T ; Liao, J ; Lin, CJ ; Wu, KH ; Li, YQ ; Zeng, CG |
| 刊名 | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
 |
| 出版日期 | 2012 |
| 卷号 | 46页码:236 |
| 关键词 | SPIN-ORBIT SCATTERING SINGLE DIRAC CONE QUANTUM OSCILLATIONS SURFACE MAGNETORESISTANCE SYSTEMS BI2TE3 |
| ISSN号 | 1386-9477 |
| 通讯作者 | Zeng, CG (reprint author), Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China. |
| 中文摘要 | We report a systematic study of the electron transport properties of the topological insulator Bi2Se3 thin films with various thicknesses in tilted magnetic fields. The negative magnetoconductivity observed in tilted fields cannot be described as a sum of the contributions from the perpendicular and the parallel magnetic fields. The details of the tilt angle dependencies rule out the possibility of significant Zeeman effects on the low field magnetotransport. Possible mechanisms for the in-plane-field effect are discussed based on the experimental data. (c) 2012 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | NSFC [91121003, 91021018, 10974188, 11034006]; NKBRPC [2009CB929502, 20113402110046]; "One-hundred-person project of CAS", SRFDP [20113402110046] |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46127]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, XX,He, XY,Guan, T,et al. Transport properties of topological insulator Bi2Se3 thin films in tilted magnetic fields[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2012,46:236. |
| APA | Wang, XX.,He, XY.,Guan, T.,Liao, J.,Lin, CJ.,...&Zeng, CG.(2012).Transport properties of topological insulator Bi2Se3 thin films in tilted magnetic fields.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,46,236. |
| MLA | Wang, XX,et al."Transport properties of topological insulator Bi2Se3 thin films in tilted magnetic fields".PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 46(2012):236. |
入库方式： OAI收割
来源：物理研究所
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