Tri-buffer process: A new approach to obtain high-quality ZnO epitaxial films on sapphire substrates
文献类型：期刊论文
| 作者 | Mei, ZX ; Du, XL ; Wang, Y ; Ying, MJ ; Zeng, ZQ ; Yuan, HT ; Jia, JF ; Xue, QK ; Zhang, Z |
| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
 |
| 出版日期 | 2007 |
| 卷号 | 36期号:4页码:452 |
| ISSN号 | 0361-5235 |
| 中文摘要 | A tri-buffer method was applied to achieve layer-by-layer growth of high-quality ZnO films on sapphire (0001) substrates by rf plasma-assisted molecular beam epitaxy (MBE). After sufficient nitridation of the substrate, MgO and ZnO buffer layers were subsequently deposited on the resulting AIN layer. An atomically smooth ZnO surface with a roughness less than 1 nm in a 10 mu m x 10 mu m scanned area was obtained with this method. The crystal quality was also improved, as characterized by reflection high-energy electron diffraction (RHEED), x-ray diffraction (XRD), Raman spectroscopy, and transmission electron microscopy (TEM). The results indicate that the tri-buffer process could reduce the large lattice mismatch between ZnO and nitrided sapphire and facilitate the two-dimensional (2-D) growth of the ZnO epilayer. A model is proposed to understand the observations. |
| 收录类别 | SCI |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46148]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Mei, ZX,Du, XL,Wang, Y,et al. Tri-buffer process: A new approach to obtain high-quality ZnO epitaxial films on sapphire substrates[J]. JOURNAL OF ELECTRONIC MATERIALS,2007,36(4):452. |
| APA | Mei, ZX.,Du, XL.,Wang, Y.,Ying, MJ.,Zeng, ZQ.,...&Zhang, Z.(2007).Tri-buffer process: A new approach to obtain high-quality ZnO epitaxial films on sapphire substrates.JOURNAL OF ELECTRONIC MATERIALS,36(4),452. |
| MLA | Mei, ZX,et al."Tri-buffer process: A new approach to obtain high-quality ZnO epitaxial films on sapphire substrates".JOURNAL OF ELECTRONIC MATERIALS 36.4(2007):452. |
入库方式： OAI收割
来源：物理研究所
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