Tunable rectification and giant positive magnetoresistance in Ge1-xMnx/Ge epitaxial heterojunction diodes
文献类型：期刊论文
| 作者 | Tian, YF ; Deng, JX ; Yan, SS ; Dai, YY ; Zhao, MW ; Chen, YX ; Liu, GL ; Mei, LM ; Liu, ZY ; Sun, JR |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2010 |
| 卷号 | 107期号:2 |
| 关键词 | NB-DOPED SRTIO3 |
| ISSN号 | 0021-8979 |
| 通讯作者 | Yan, SS (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China. |
| 中文摘要 | Ge1-xMnx/Ge single-crystal heterojunction diodes with p-type Ge1-xMnx ferromagnetic semiconductor were grown, respectively on Ge substrates of p-type, n-type, and intrinsic semiconductors by molecular beam epitaxy. The I-V curve of the p-Ge0.95Mn0.05/intrinsic-Ge diode can be greatly tuned by a magnetic field, which was indicated by a large positive magnetoresistance. The magnetoresistance shows a peak value of 700% under a +2 V bias voltage around the Curie temperature of 225 K of the Ge0.95Mn0.05 magnetic semiconductor, and it remains as high as 440% at room temperature. The origin of the positive magnetoresistance is discussed. |
| 收录类别 | SCI |
| 资助信息 | National Basic Research Program of China [2007CB924903, 2009CB929202]; NSF [10974120] |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46177]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Tian, YF,Deng, JX,Yan, SS,et al. Tunable rectification and giant positive magnetoresistance in Ge1-xMnx/Ge epitaxial heterojunction diodes[J]. JOURNAL OF APPLIED PHYSICS,2010,107(2). |
| APA | Tian, YF.,Deng, JX.,Yan, SS.,Dai, YY.,Zhao, MW.,...&Sun, JR.(2010).Tunable rectification and giant positive magnetoresistance in Ge1-xMnx/Ge epitaxial heterojunction diodes.JOURNAL OF APPLIED PHYSICS,107(2). |
| MLA | Tian, YF,et al."Tunable rectification and giant positive magnetoresistance in Ge1-xMnx/Ge epitaxial heterojunction diodes".JOURNAL OF APPLIED PHYSICS 107.2(2010). |
入库方式： OAI收割
来源：物理研究所
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