Tunable surface band gap in MgxZn1-xO thin films
文献类型：期刊论文
| 作者 | Xue, MS ; Guo, QL ; Wu, KH ; Guo, JD |
| 刊名 | JOURNAL OF CHEMICAL PHYSICS
 |
| 出版日期 | 2008 |
| 卷号 | 129期号:23 |
| 关键词 | MOLECULAR-BEAM EPITAXY BUFFER LAYER PHASE GROWTH MO(100) ALLOY ZNO |
| ISSN号 | 0021-9606 |
| 通讯作者 | Guo, QL (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | MgxZn1-xO thin films epitaxially grown on Mo(110) substrate under ultrahigh vacuum condition were studied in situ by various surface analysis techniques including x-ray photoelectron spectroscopy, Auger electron spectroscopy, low-energy electron diffraction, and high resolution electron energy loss spectroscopy. The results indicate that as-grown MgxZn1-xO films are soluble phase, and a phase transition from wurtzite to cubic structure occurs in the region of x=0.55-0.67. The surface band gap can be tuned continuously with altering the content of Mg in MgxZn1-xO films, and its tunable window width is about 1.9 eV. Based on heterojunction and quantum well structure, this kind of materials can be applied in wide-band-gap semiconductor devices, such as short-wavelength light-emitting devices. |
| 收录类别 | SCI |
| 资助信息 | National Science Foundation of China [10574153, 10574146, 2007CB936800] |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46180]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xue, MS,Guo, QL,Wu, KH,et al. Tunable surface band gap in MgxZn1-xO thin films[J]. JOURNAL OF CHEMICAL PHYSICS,2008,129(23). |
| APA | Xue, MS,Guo, QL,Wu, KH,&Guo, JD.(2008).Tunable surface band gap in MgxZn1-xO thin films.JOURNAL OF CHEMICAL PHYSICS,129(23). |
| MLA | Xue, MS,et al."Tunable surface band gap in MgxZn1-xO thin films".JOURNAL OF CHEMICAL PHYSICS 129.23(2008). |
入库方式： OAI收割
来源：物理研究所
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