Tunnel Magnetoresistance Effect in CoFeB/MgAlOx/CoFeB Magnetic Tunnel Junctions
文献类型：期刊论文
| 作者 | Liu, HF ; Ma, QL ; Rizwan, S ; Liu, DP ; Wang, SG ; Han, XF |
| 刊名 | IEEE TRANSACTIONS ON MAGNETICS
 |
| 出版日期 | 2011 |
| 卷号 | 47期号:10页码:2716 |
| 关键词 | CO75FE25 FERROMAGNETIC ELECTRODES |
| ISSN号 | 0018-9464 |
| 通讯作者 | Han, XF (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Magnetic tunnel junctions (MTJs) with the core structure of CoFeB/MgAlOx/CoFeB were fabricated using magnetron sputtering technique. The MgAlOx tunnel barrier was obtained by plasma oxidation of an Mg/Al bilayer in an Ar + O-2 atmosphere. Series of MTJs were fabricated with different Mg layer thicknesses (t(Mg)), and Al layer thickness was fixed at 1.3 nm. The annealing effect on the tunneling magnetoresistance (TMR) ratio was investigated, and TMR ratio of 65% at room temperature (RT) was shown when it was annealed at 375 degrees C with the t(Mg) = 0.5 nm. The temperature dependence of conductance can be fit by the magnon-assisted tunneling model by adding spin independent tunneling contribution for the samples investigated here, and the spin independent conductance G(SI) varies with t(Mg), possibly due to less oxidation for thicker Mg layer. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46201]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, HF,Ma, QL,Rizwan, S,et al. Tunnel Magnetoresistance Effect in CoFeB/MgAlOx/CoFeB Magnetic Tunnel Junctions[J]. IEEE TRANSACTIONS ON MAGNETICS,2011,47(10):2716. |
| APA | Liu, HF,Ma, QL,Rizwan, S,Liu, DP,Wang, SG,&Han, XF.(2011).Tunnel Magnetoresistance Effect in CoFeB/MgAlOx/CoFeB Magnetic Tunnel Junctions.IEEE TRANSACTIONS ON MAGNETICS,47(10),2716. |
| MLA | Liu, HF,et al."Tunnel Magnetoresistance Effect in CoFeB/MgAlOx/CoFeB Magnetic Tunnel Junctions".IEEE TRANSACTIONS ON MAGNETICS 47.10(2011):2716. |
入库方式： OAI收割
来源：物理研究所
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