中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Turbostratic boron carbonitride films produced by bias-assisted hot filament chemical vapor deposition

文献类型:期刊论文

作者Yu, J ; Wang, EG ; Ahn, J ; Yoon, SF ; Zhang, Q ; Cui, J ; Yu, MB
刊名JOURNAL OF APPLIED PHYSICS
出版日期2000
卷号87期号:8页码:4022
关键词THIN-FILMS GRAPHITE NITRIDE SEMICONDUCTOR RAMAN BC2N
ISSN号0021-8979
通讯作者Yu, J (reprint author), Nanyang Technol Univ, Ctr Microelect, Singapore 639798, Singapore.
中文摘要Boron carbonitride (BCN) films with various compositions have been prepared by bias-assisted hot filament chemical vapor deposition. The three elements of B, C, and N are chemically bonded with each other and an atomic-level BCN hybrid has been formed in the films. The deposited films are composed of turbostratic structural regions ranging from a few to a few tens of nanometers. Besides, there exist some amorphous domains in the films. Boron atoms have been confirmed to be incorporated into the films with a concentration up to 70 at. %. The interplanar spacing of 3.49 A is found to be independent of the film composition in this range. These films show a blueshift in photoluminescence peak with increasing B content. These findings show that the electronic structure of BCN compounds can be controlled by changing compositions and the BCN compounds are blue-light emitting materials. (C) 2000 American Institute of Physics. [S0021-8979(00)02208-8].
收录类别SCI
语种英语
公开日期2013-09-23
源URL[http://ir.iphy.ac.cn/handle/311004/46226]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Yu, J,Wang, EG,Ahn, J,et al. Turbostratic boron carbonitride films produced by bias-assisted hot filament chemical vapor deposition[J]. JOURNAL OF APPLIED PHYSICS,2000,87(8):4022.
APA Yu, J.,Wang, EG.,Ahn, J.,Yoon, SF.,Zhang, Q.,...&Yu, MB.(2000).Turbostratic boron carbonitride films produced by bias-assisted hot filament chemical vapor deposition.JOURNAL OF APPLIED PHYSICS,87(8),4022.
MLA Yu, J,et al."Turbostratic boron carbonitride films produced by bias-assisted hot filament chemical vapor deposition".JOURNAL OF APPLIED PHYSICS 87.8(2000):4022.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。